III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
[HTML][HTML] Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V
semiconductors have been considered as potential platforms for quantum technology. While …
semiconductors have been considered as potential platforms for quantum technology. While …
An ultrahigh efficiency excitonic micro-LED
A Pandey, J Min, M Reddeppa, Y Malhotra, Y **
H Ye, X Wang, D Bai, J Zhang, X Wu, GP Zhang… - Physical Review B, 2021 - APS
van der Waals magnetic heterostructures, consisting of a wide band-gap nitride
semiconductor and an intrinsic ferromagnetic semiconductor, are potentially useful for low …
semiconductor and an intrinsic ferromagnetic semiconductor, are potentially useful for low …
The electronic and optical properties of III–V binary 2D semiconductors: how to achieve high precision from accurate many-body methods
Seven hexagonal 2D materials consisting of elements of the IIIA and VA groups (BN, BP,
BAs, AlN, GaN, GaP, and GaAs) were theoretically studied using first-principles methods …
BAs, AlN, GaN, GaP, and GaAs) were theoretically studied using first-principles methods …