Coherent antiferromagnetic spintronics

J Han, R Cheng, L Liu, H Ohno, S Fukami - Nature Materials, 2023 - nature.com
Antiferromagnets have attracted extensive interest as a material platform in spintronics. So
far, antiferromagnet-enabled spin–orbitronics, spin-transfer electronics and spin caloritronics …

Roadmap of spin–orbit torques

Q Shao, P Li, L Liu, H Yang, S Fukami… - IEEE transactions on …, 2021 - ieeexplore.ieee.org
Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque

JY Yoon, P Zhang, CT Chou, Y Takeuchi, T Uchimura… - Nature Materials, 2023 - nature.com
Non-collinear antiferromagnets are an emerging family of spintronic materials because they
not only possess the general advantages of antiferromagnets but also enable more …

Emerging antiferromagnets for spintronics

H Chen, L Liu, X Zhou, Z Meng, X Wang… - Advanced …, 2024 - Wiley Online Library
Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Spin-orbit torques: Materials, mechanisms, performances, and potential applications

C Song, R Zhang, L Liao, Y Zhou, X Zhou… - Progress in Materials …, 2021 - Elsevier
Current-induced spin-orbit torque (SOT) is attracting increasing interest and exciting
significant research activity. We aim to provide a comprehensive review of recent progress in …

Antiferromagnetic half-skyrmions and bimerons at room temperature

H Jani, JC Lin, J Chen, J Harrison, F Maccherozzi… - Nature, 2021 - nature.com
In the quest for post-CMOS (complementary metal–oxide–semiconductor) technologies,
driven by the need for improved efficiency and performance, topologically protected …

Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance

J Shi, S Arpaci, V Lopez‐Dominguez… - Advanced …, 2024 - Wiley Online Library
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing
devices with unprecedented speed, energy efficiency, and bit density. Realizing this …

Electric‐field‐controlled antiferromagnetic spintronic devices

H Yan, Z Feng, P Qin, X Zhou, H Guo… - Advanced …, 2020 - Wiley Online Library
In recent years, the field of antiferromagnetic spintronics has been substantially advanced.
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …

Coexistence of anomalous Hall effect and weak magnetization in a nominally collinear antiferromagnet MnTe

KP Kluczyk, K Gas, MJ Grzybowski, P Skupiński… - Physical Review B, 2024 - APS
In various material systems, an antiferromagnetic phase was found to coexist with a weak
ferromagneticlike signal, while symmetry-based theoretical predictions indicate a possibility …

Spin Hall-induced bilinear magnetoelectric resistance

DJ Kim, KW Kim, K Lee, JH Oh, X Chen, S Yang… - Nature materials, 2024 - nature.com
Magnetoresistance is a fundamental transport phenomenon that is essential for reading the
magnetic states for various information storage, innovative computing and sensor devices …