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Coherent antiferromagnetic spintronics
Antiferromagnets have attracted extensive interest as a material platform in spintronics. So
far, antiferromagnet-enabled spin–orbitronics, spin-transfer electronics and spin caloritronics …
far, antiferromagnet-enabled spin–orbitronics, spin-transfer electronics and spin caloritronics …
Roadmap of spin–orbit torques
Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …
Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque
Non-collinear antiferromagnets are an emerging family of spintronic materials because they
not only possess the general advantages of antiferromagnets but also enable more …
not only possess the general advantages of antiferromagnets but also enable more …
Emerging antiferromagnets for spintronics
H Chen, L Liu, X Zhou, Z Meng, X Wang… - Advanced …, 2024 - Wiley Online Library
Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …
Spin-orbit torques: Materials, mechanisms, performances, and potential applications
Current-induced spin-orbit torque (SOT) is attracting increasing interest and exciting
significant research activity. We aim to provide a comprehensive review of recent progress in …
significant research activity. We aim to provide a comprehensive review of recent progress in …
Antiferromagnetic half-skyrmions and bimerons at room temperature
In the quest for post-CMOS (complementary metal–oxide–semiconductor) technologies,
driven by the need for improved efficiency and performance, topologically protected …
driven by the need for improved efficiency and performance, topologically protected …
Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing
devices with unprecedented speed, energy efficiency, and bit density. Realizing this …
devices with unprecedented speed, energy efficiency, and bit density. Realizing this …
Electric‐field‐controlled antiferromagnetic spintronic devices
In recent years, the field of antiferromagnetic spintronics has been substantially advanced.
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …
Coexistence of anomalous Hall effect and weak magnetization in a nominally collinear antiferromagnet MnTe
KP Kluczyk, K Gas, MJ Grzybowski, P Skupiński… - Physical Review B, 2024 - APS
In various material systems, an antiferromagnetic phase was found to coexist with a weak
ferromagneticlike signal, while symmetry-based theoretical predictions indicate a possibility …
ferromagneticlike signal, while symmetry-based theoretical predictions indicate a possibility …
Spin Hall-induced bilinear magnetoelectric resistance
Magnetoresistance is a fundamental transport phenomenon that is essential for reading the
magnetic states for various information storage, innovative computing and sensor devices …
magnetic states for various information storage, innovative computing and sensor devices …