The current–voltage (J (V)) data measured in light and dark from a‐Si‐based solar cells
have been analyzed to yield six parameters that completely specify the illuminated J (V) …

We analyze the forward characteristics of a‐Si: H nip and pin diodes. At low bias, a well‐
defined exponential region exists, described by a noninteger quality factor n between 1.2 …

U. Dutta, P. Chatterjee; The open circuit voltage in amorphous silicon pin solar cells and its
relationship to material, device and dark diode parameters. J. Appl. Phys. 15 August 2004; …

n‐type amorphous silicon on p‐type crystalline silicon heterojunction diodes were fabricated
and electrically characterized. The a‐Si: H film was deposited by plasma enhanced …

A first principles computer model for simulating the performance of amorphous
semiconductor solar cells has been developed. With a suitable choice of parameters, the …

In this study, the influence of p/i interface on the stability of amorphous silicon solar cells has
been investigated by light-induced degradation study. To peruse this study a series of pin …

A careful study has been carried out on dark forward bias current-voltage characteristics in
high-quality well-controlled a‐Si: H solar cell structures. Contributions of potential barriers in …

Space charge Shockley-Read-Hall recombination currents in the presence of discrete or
continuous distributions of recombination centres are analysed. For a single level trap …

We investigate the current transport mechanisms in the amorphous silicon/crystalline silicon
heterojunction and the change of these processes when an intrinsic amorphous silicon …

The performance of hydrogenated amorphous silicon (a-Si: H) pin solar cells is limited, as
they contain a relatively high concentration of defects. The dark current voltage (JV) …