This brief presents a review of developments in spin-transfer-torque magnetoresistive
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …

Real-world inverse synthetic aperture radar (ISAR) object recognition is a critical and
challenging problem in computer vision tasks. In this article, an efficient real-world ISAR …

Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-
generation memory. However, maintaining a target sensing margin is a challenge with …

This paper introduces the concept of time-based sensing (TBS) for bitcell read in spin
transfer torque magnetic RAMs arrays. The TBS scheme converts the bitline voltage into …

As process technology downscales, read reliability has become a critical barrier for spin
transfer torque magnetic random access memory (STT-MRAM), owing to the increasing …

This paper proposes a novel approach to enhance the STT-MRAMs read margin based on
the concept of dynamic reference (DR). Our dynamic reference scheme dynamically adjusts …

Resistive nonvolatile memory (NVM) devices such as spin transfer torque random access
memory (STT-RAM) and resistive random access memory are considered to be leading …

In the design of nonvolatile memory (NVM), the sensing scheme (SS) has become a read-
energy bottleneck because the required read-cell current is too large to satisfy a target read …

In the spin-transfer-torque random access memory design, the sensing scheme has become
a bottleneck from the viewpoints of performance and read energy, because the required …

Spin-transfer torque random access memory (STT-RAM), as an emerging nonvolatile
memory technology, provides very dense array structure and extremely low leakage power …