Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

The physics and operating principles of hybrid superconductor–semiconductor devices rest
ultimately on the magnetic properties of their elementary subgap excitations, usually called …

Abstract Two-dimensional (2D) nanomaterials have recently attracted considerable attention
due to their promising applications in next-generation electronics and optoelectronics. In …

We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires
and coupled to aluminum superconducting leads. By varying the superconducting gap Δ …

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–
V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique …

We demonstrate an efficient core–shell GaAs/AlGaAs nanowire photodetector operating at
room temperature. The design of this nanoscale detector is based on a type-I heterostructure …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

Here we report InAs nanowire (NW) near-infrared photodetectors having a detection
wavelength up to∼ 1.5 μm. The single InAs NW photodetectors displayed minimum …

Temperature-dependent I− V and C− V spectroscopy of single InAs nanowire field-effect
transistors were utilized to directly shed light on the intrinsic electron transport properties as …