[HTML][HTML] Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
Temperature dependence of band gaps in dilute bismides
Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for develo** …
energy of semiconductors is very important and constitutes the basis for develo** …
GaSbBi/GaSb quantum well laser diodes
We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …
Bi flux-dependent MBE growth of GaSbBi alloys
The incorporation of Bi in GaSb 1− x Bi x alloys grown by molecular beam epitaxy is
investigated as a function of Bi flux at fixed growth temperature (275° C) and growth rate (1 μ …
investigated as a function of Bi flux at fixed growth temperature (275° C) and growth rate (1 μ …
Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range
The 8-band kp Hamiltonian is applied to calculate electronic band structure and material
gain in III-V-Bi quantum wells (QWs) grown on GaSb substrates. We analyzed three Bi …
gain in III-V-Bi quantum wells (QWs) grown on GaSb substrates. We analyzed three Bi …
Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films
L Yue, X Chen, Y Zhang, F Zhang, L Wang… - Journal of Alloys and …, 2018 - Elsevier
Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by
varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is …
varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is …
Influence of Bi and N related impurity states on the band structure and band offsets of GaSbBiN alloys
The perturbed band structure of a proposed material GaSbBiN, formed by the incorporation
of N and Bi in GaSb, is calculated using a 16 band k· p Hamiltonian. The changes in band …
of N and Bi in GaSb, is calculated using a 16 band k· p Hamiltonian. The changes in band …
Calculation of the band structure, carrier effective mass, and the optical absorption properties of GaSbBi alloys
S Das, MK Bhowal, S Dhar - Journal of Applied Physics, 2019 - pubs.aip.org
The details of the electronic band structure of GaSbBi as functions of Bi mole fraction and
along different symmetry directions of the crystal are calculated using a 14 band kp model …
along different symmetry directions of the crystal are calculated using a 14 band kp model …
GaSbBi/GaSb quantum-well and wire laser diodes
S Ridene - Chemical Physics Letters, 2018 - Elsevier
In this work, we present detailed theoretical studies of the optical gain spectra and the
emission wavelength of GaSb 1-x Bi x/GaSb and traditional GaAs 1-x Bi x/GaAs dilute …
emission wavelength of GaSb 1-x Bi x/GaSb and traditional GaAs 1-x Bi x/GaAs dilute …