Insights into the operation of negative capacitance FinFET for low power logic applications

RK Jaisawal, PN Kondekar, S Yadav, P Upadhyay… - Microelectronics …, 2022 - Elsevier
In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …

Analog/RF performance and effect of temperature on ferroelectric layer improved FET device with spacer

Y Pathak, BD Malhotra, R Chaujar - Silicon, 2022 - Springer
In this article, we investigated the analog performance and RF (Radio Frequency)
performance of ferroelectric layer improved Field Effect Transistor device that is metal …

TCAD investigation of ferroelectric based substrate MOSFET for digital application

R Mann, R Chaujar - Silicon, 2022 - Springer
The present investigation is focused on the analog/RF performance of ferroelectric (FE)
based substrate metal oxide semiconductor field effect transistor (MOSFET) for digital …

Negative capacitance based phase-transition FET for low power applications: Device-circuit co-design

S Yadav, PN Kondekar, P Upadhyay… - Microelectronics Journal, 2022 - Elsevier
In this article, we have performed a comprehensive study into the Phase Transition Material
based FinFET (PT-FinFET) device's capabilities for low-power, energy-efficient applications …

DFT based atomic modeling and Analog/RF analysis of ferroelectric HfO2 based improved FET device

Y Pathak, BD Malhotra, R Chaujar - Physica Scripta, 2023 - iopscience.iop.org
In this study, we systematically investigated the Analog/RF and linearity parameter of SM
DGNCFET (single metal double gate negative capacitance field effect transistor) and DM …

Experimental design of stencil-printed high-performance organic electrochemical transistors

AM Ghafari, M Catacchio, E Rosqvist… - Materials …, 2023 - pubs.rsc.org
Organic electrochemical transistors (OECTs) are widely employed in several bioelectronic
applications such as biosensors, logic circuits, and neuromorphic engineering, providing a …

Detection of biomolecules in dielectric modulated double metal below ferroelectric layer FET with improved sensitivity

Y Pathak, BD Malhotra, R Chaujar - Journal of Materials Science: Materials …, 2022 - Springer
In this work, we examined the double metal below ferroelectric layer FET that is double
metal below negative capacitance field-effect transistor (DM-below-NCFET) for biosensing …

Design and analysis of improved phase-transition FinFET utilizing negative capacitance

S Yadav, P Upadhyay, B Awadhiya… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Phase transition FinFET (PT-FinFET) is an emerging steep slope device that utilizes phase
transition material (PTM) at the source of the host FinFET to achieve steep switching and …

Ferroelectric negative-capacitance-assisted phase-transition field-effect transistor

S Yadav, P Upadhyay, B Awadhiya… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
An enormous study is being carried out in the field of emerging steep slope devices,
specifically on negative-capacitance-based and phase transition-based devices. This article …

Effect of back gate biasing in negative capacitance field effect transistor

B Awadhiya, S Yadav, P Upadhyay… - Micro and Nanostructures, 2022 - Elsevier
In this paper, we have studied the effect of back gate bias technique in negative capacitance
field effect transistor. In N-NCFET, OFF current decreases and threshold voltage increases …