This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor
(HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the …

In this paper, a novel analytical design technique is presented to implement a coupled-line
wideband Wilkinson power divider (WPD). The configuration of the WPD is comprised of …

In this paper, a high-efficiency GaN Doherty power amplifier (DPA) for 5G applications in the
N78 sub-6 GHz band is introduced. The theoretical analysis of the matching networks for the …

This article presents a Doherty-like Reconfigurable Load Modulated Power Amplifier (R-
LMBA) topology, which enables a broadband 6-/12-dB power back-off (PBO) reconfiguration …

This paper presents a Ka-band three-stage power amplifier for 5G communications, which
has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty …

In this paper, we present a monolithic microwave-integrated circuit (MMIC) asymmetric
Doherty power amplifier (ADPA) using 0.25 μ m gallium-nitride (GaN) process with a …

This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-
arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband …

An asymmetric Doherty power amplifier with saturated output power greater than 35 dBm,
amplitude-to-phase distortion (AM-PM) less than 5 and power back-off of 9 dB is designed …

With the continuous advancement of modern technology, the evolution of wireless
communication systems has also attracted more attention. From mobile phones to IoT …

Radio frequency (RF) front-end passive circuit components can support the ever-desired
demand for faster, reliable, and ubiquitous wireless systems for application in microwave …