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A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS: GO (1: 1) and (ZnCdS: GO (1: 0.5) doped PVP interlayer using current–voltage (I …
In this study, both the Au/(ZnCdS: GO (1: 1) doped PVP)/n-Si and Au/(ZnCdS: GO (1: 0.5)
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC: Sm2O3) interlayer
Abstract Both Au-(n-Si)(MS) structures with & without PVC and (Sm 2 O 3-PVC) interlayer
(MPS) has been performed onto n type Si wafer to compare dielectric and electric-modulus …
(MPS) has been performed onto n type Si wafer to compare dielectric and electric-modulus …
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure
A metal-polymer-semiconductor (MPS) structure based on 5 wt% graphene (Gr) doped
polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method …
polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method …
Frequency dependence of the dielectric properties of Au/(NG: PVP)/n-Si structures
The consequences of applying (Nanographite-PVP) interlayer on surface-states (N ss),
series-resistance (R s), and polarization effects on the real and imaginary parts of the …
series-resistance (R s), and polarization effects on the real and imaginary parts of the …
Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures
The electrical conductivity and dielectric properties of WO 3 nanostructures were measured
by impedance spectroscopy using 50 Hz–5 MHz frequency in steps of 100 Hz and 303–383 …
by impedance spectroscopy using 50 Hz–5 MHz frequency in steps of 100 Hz and 303–383 …
Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5%(graphene: PVA) by impedance spectroscopy
The Z–V measurements were performed in wide-range voltage (±6 V), and then the
real/imaginary parts of ε*(ε′, ε ″), M*(M′, M ″), Z*(Z′, Z ″), tan δ, and σ ac values of the …
real/imaginary parts of ε*(ε′, ε ″), M*(M′, M ″), Z*(Z′, Z ″), tan δ, and σ ac values of the …
On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C29H32O17)/p-Si (MPS) structures in wide range of frequency and voltage
In this study, C 29 H 32 O 17 was deposited onto p-type Si crystal to obtain Al/(C 29 H 32 O
17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε ″), loss-tangent …
17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε ″), loss-tangent …
On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 …
To increase the performance of the metal–semiconductor (MS) structure, MS and pure
polyvinyl-pyrrolidine (PVP), Gr,(ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed …
polyvinyl-pyrrolidine (PVP), Gr,(ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed …
Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0. 3Zn0. 7O) interfacial layer in the wide range of …
The real and imaginary parts of complex-dielectric (ε′, ε'') and electric-modulus (M′, M ″),
dielectric loss tangent (tan δ), and conductivity (σ) values of Al/(Cd 0.3 Zn 0.7 O)/p-Si …
dielectric loss tangent (tan δ), and conductivity (σ) values of Al/(Cd 0.3 Zn 0.7 O)/p-Si …
Graphene reinforced aluminum nanocomposites: synthesis, characterization and properties
Novel composites of Al–graphene (0.1–0.3 wt%) have been prepared by powder
metallurgical processing. Powder composites were prepared by planetary ball milling route …
metallurgical processing. Powder composites were prepared by planetary ball milling route …