The concept of third generation photovoltaics is to significantly increase device efficiencies
whilst still using thin film processes and abundant non-toxic materials. This can be achieved …

A variety of silicon-based nanostructures with dimensions in the 1–5 nm range now emit
tunable photoluminescence (PL) spanning the visible range. Achievement of high …

Conductive polypyrrole/SiC nanocomposites are fabricated via a facile oxidative
polymerization approach using p-toluene sulfonic acid as a dopant and ammonium …

Silicon carbide reinforced polyurethane nanocomposites were fabricated by a facile surface-
initiated-polymerization (SIP) method. The particle loading was tuned to up to 35wt% without …

We report work progress on the growth of Si quantum dots in different matrices for future
photovoltaic applications. The work reported here seeks to engineer a wide‐bandgap silicon …

Thin films of Si nanocrystals (Si NCs) embedded in a silicon carbide (SiC) matrix (Si-NC:
SiC) were prepared by alternating deposition of Si-rich silicon carbide (Si1− xCx) and near …

Heteroface devices have been realized by depositing phosphorus-doped silicon (Si)
quantum dots (QDs)(n-type) on a p-type crystalline silicon substrate. To compare the …

Seeking light sources from Si-based materials with an emission wavelength meeting the
requirements of optical telecommunication is a challenge nowadays. It was found that the …

Due to recent investments by government and industry, silicon-based photonics has a
chance of becoming “the” mainstream photonics technology. This paper presents a survey of …

Thermalization of photogenerated carriers in bulk materials is the main bottleneck for the
conversion efficiency of conventional inorganic solar cells. Furthermore, despite extensive …