Survey of photonic and plasmonic interconnect technologies for intra-datacenter and high-performance computing communications

CA Thraskias, EN Lallas, N Neumann… - … Surveys & Tutorials, 2018 - ieeexplore.ieee.org
Large scale data centers (DC) and high performance computing (HPC) systems require
more and more computing power at higher energy efficiency. They are already consuming …

High-speed grating-assisted all-silicon photodetectors for 850 nm applications

MM Pour Fard, C Williams, G Cowan… - Optics …, 2017 - opg.optica.org
This paper presents the design, fabrication, and measurement results of a novel lateral pin
silicon photodetector (Si-PD) for 850 nm in a silicon-on-insulator (SOI) platform. In the …

Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology

SS Kohneh Poushi, B Goll, K Schneider-Hornstein… - Sensors, 2023 - mdpi.com
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …

1.23-pJ/bit 25-Gb/s inductor-less optical receiver with low-voltage silicon photodetector

MMP Fard, O Liboiron-Ladouceur… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
This paper presents the design and measurement results of an inductor-less and power-
efficient 25-Gb/s optical receiver in 65-nm TSMC technology. Furthermore, the design and …

Performance optimization and improvement of silicon avalanche photodetectors in standard CMOS technology

MJ Lee, WY Choi - IEEE Journal of Selected Topics in Quantum …, 2017 - ieeexplore.ieee.org
This paper discusses design optimization for silicon avalanche photodetectors (APDs)
fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology in …

A near-infrared enhanced field-line crowding based CMOS-integrated avalanche photodiode

SSK Poushi, C Gasser, B Goll, M Hofbauer… - IEEE Photonics …, 2023 - ieeexplore.ieee.org
This paper presents a CMOS-integrated linear-mode avalanche photodiode based on
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …

Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate

H Xu, T Feng, J Guo, Y Yang, DW Zhang - Optics Letters, 2024 - opg.optica.org
In this work, we present a novel, to the best of our knowledge, lateral avalanche photodiode
(APD) with low breakdown voltage and high bandwidth which has the potential to serve as a …

Bit error performance of APD and SPAD receivers in optical wireless communication

H Mahmoudi, H Zimmermann - Electronics, 2021 - mdpi.com
This review concentrates on the state-of-the-art hardware-oriented receiver aspects for
optical wireless communication (OWC), and points to the importance of BER performance …

A 45 nm CMOS avalanche photodiode with 8.4-GHz bandwidth

W Zhi, Q Quan, P Yu, Y Jiang - Micromachines, 2020 - mdpi.com
Photodiode is one of the key components in optoelectronic technology, which is used to
convert optical signal into electrical ones in modern communication systems. In this paper …

Compact ring resonator enhanced silicon metal-semiconductor-metal photodetector in SiN-on-SOI platform

A Chatterjee, S Yadav, S Kumar Sikdar… - Optics …, 2020 - opg.optica.org
We present a compact on-chip resonator enhanced silicon metal-semiconductor-metal
(MSM) photodetector in 850 nm wavelength band for communication and lab-on-chip bio …