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Survey of photonic and plasmonic interconnect technologies for intra-datacenter and high-performance computing communications
Large scale data centers (DC) and high performance computing (HPC) systems require
more and more computing power at higher energy efficiency. They are already consuming …
more and more computing power at higher energy efficiency. They are already consuming …
High-speed grating-assisted all-silicon photodetectors for 850 nm applications
This paper presents the design, fabrication, and measurement results of a novel lateral pin
silicon photodetector (Si-PD) for 850 nm in a silicon-on-insulator (SOI) platform. In the …
silicon photodetector (Si-PD) for 850 nm in a silicon-on-insulator (SOI) platform. In the …
Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
SS Kohneh Poushi, B Goll, K Schneider-Hornstein… - Sensors, 2023 - mdpi.com
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …
1.23-pJ/bit 25-Gb/s inductor-less optical receiver with low-voltage silicon photodetector
This paper presents the design and measurement results of an inductor-less and power-
efficient 25-Gb/s optical receiver in 65-nm TSMC technology. Furthermore, the design and …
efficient 25-Gb/s optical receiver in 65-nm TSMC technology. Furthermore, the design and …
Performance optimization and improvement of silicon avalanche photodetectors in standard CMOS technology
This paper discusses design optimization for silicon avalanche photodetectors (APDs)
fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology in …
fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology in …
A near-infrared enhanced field-line crowding based CMOS-integrated avalanche photodiode
This paper presents a CMOS-integrated linear-mode avalanche photodiode based on
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …
Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate
H Xu, T Feng, J Guo, Y Yang, DW Zhang - Optics Letters, 2024 - opg.optica.org
In this work, we present a novel, to the best of our knowledge, lateral avalanche photodiode
(APD) with low breakdown voltage and high bandwidth which has the potential to serve as a …
(APD) with low breakdown voltage and high bandwidth which has the potential to serve as a …
Bit error performance of APD and SPAD receivers in optical wireless communication
This review concentrates on the state-of-the-art hardware-oriented receiver aspects for
optical wireless communication (OWC), and points to the importance of BER performance …
optical wireless communication (OWC), and points to the importance of BER performance …
A 45 nm CMOS avalanche photodiode with 8.4-GHz bandwidth
W Zhi, Q Quan, P Yu, Y Jiang - Micromachines, 2020 - mdpi.com
Photodiode is one of the key components in optoelectronic technology, which is used to
convert optical signal into electrical ones in modern communication systems. In this paper …
convert optical signal into electrical ones in modern communication systems. In this paper …
Compact ring resonator enhanced silicon metal-semiconductor-metal photodetector in SiN-on-SOI platform
We present a compact on-chip resonator enhanced silicon metal-semiconductor-metal
(MSM) photodetector in 850 nm wavelength band for communication and lab-on-chip bio …
(MSM) photodetector in 850 nm wavelength band for communication and lab-on-chip bio …