Overview of high voltage SiC power semiconductor devices: Development and application

S Ji, Z Zhang, F Wang - CES Transactions on Electrical …, 2017 - ieeexplore.ieee.org
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …

Temperature-dependent characterization, modeling, and switching speed-limitation analysis of third-generation 10-kV SiC MOSFET

S Ji, S Zheng, F Wang… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET
including the static characteristics and switching performance are carried out in this paper …

Advances in power conversion and drives for shipboard systems

F Wang, Z Zhang, T Ericsen, R Raju… - Proceedings of the …, 2015 - ieeexplore.ieee.org
This paper presents some of the key advances in power electronics pertaining to shipboard
electric power system applications. The focus is on the emerging wide bandgap …

A gate drive with power over fiber-based isolated power supply and comprehensive protection functions for 15-kV SiC MOSFET

X Zhang, H Li, JA Brothers, L Fu… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

S Ji, M Laitinen, X Huang, J Sun… - … on Power Electronics, 2018 - ieeexplore.ieee.org
This paper presents the characterization of the temperature-dependent short-circuit
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …

Power cell design and assessment methodology based on a high-current 10-kV SiC MOSFET half-bridge module

S Mocevic, J Yu, Y Xu, J Stewart, J Wang… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
While 10-kV silicon-carbide (SiC) MOSFETs are gradually penetrating medium-voltage (MV)
applications, intertwined challenges concerning high-voltage insulation, high dv/dt …

Design and testing of 1 kV H-bridge power electronics building block based on 1.7 kV SiC MOSFET module

J Wang, R Burgos, D Boroyevich… - 2018 International Power …, 2018 - ieeexplore.ieee.org
This paper presents a power electronics building block (PEBB) design based on 1.7 kV SiC
MOSFET power modules. The PEBB power stage is an H-bridge circuit that can be …

A 12.47 kV medium voltage input 350 kW EV fast charger using 10 kV SiC MOSFET

X Liang, S Srdic, J Won, E Aponte… - 2019 IEEE Applied …, 2019 - ieeexplore.ieee.org
This paper presents a medium-voltage (MV)(12.47 kV), 350 kW electric vehicle (EV) fast
charger using 10 kV SiC MOSFETs. Detailed system design procedure based on the 10 kV …

Busbar design for SiC-based H-bridge PEBB using 1.7 kV, 400 a SiC MOSFETs operating at 100 kHz

NR Mehrabadi, I Cvetkovic, J Wang… - 2016 IEEE Energy …, 2016 - ieeexplore.ieee.org
This paper presents a systematic study of the busbar design and optimization for SiC-based
H-bridge power electronics building block (PEBB) used in high-frequency and high-power …

Power electronics building block (PEBB) design based on 1.7 kV SiC MOSFET modules

J Wang, Z Shen, I Cvetkovic… - 2017 IEEE Electric …, 2017 - ieeexplore.ieee.org
This paper presents the design of a Power Electronics Building Block (PEBB) based on 1.7
kV SiC MOSFET power modules. The PEBB is an H-bridge converter module that can be …