Electronic Transport Properties of 1D‐Defects in Graphene and Other 2D‐Systems
P Willke, MA Schneider, M Wenderoth - Annalen der Physik, 2017 - Wiley Online Library
The continuous progress in device miniaturization demands a thorough understanding of
the electron transport processes involved. The influence of defects‐discontinuities in the …
the electron transport processes involved. The influence of defects‐discontinuities in the …
Quantum transport simulation scheme including strong correlations and its application to organic radicals adsorbed on gold
A Droghetti, I Rungger - Physical Review B, 2017 - APS
We present a computational method to quantitatively describe the linear-response
conductance of nanoscale devices in the Kondo regime. This method relies on a projection …
conductance of nanoscale devices in the Kondo regime. This method relies on a projection …
Antidam** spin-orbit torque driven by spin-flip reflection mechanism on the surface of a topological insulator: A time-dependent nonequilibrium Green function …
Motivated by recent experiments observing spin-orbit torque (SOT) acting on the
magnetization m ⃗ of a ferromagnetic (F) overlayer on the surface of a three-dimensional …
magnetization m ⃗ of a ferromagnetic (F) overlayer on the surface of a three-dimensional …
Spin-orbit induced equilibrium spin currents in materials
The existence of pure spin currents in absence of any driving external field is commonly
considered an exotic phenomenon appearing only in quantum materials, such as …
considered an exotic phenomenon appearing only in quantum materials, such as …
Controlling the spin texture of topological insulators by rational design of organic molecules
We present a rational design approach to customize the spin texture of surface states of a
topological insulator. This approach relies on the extreme multifunctionality of organic …
topological insulator. This approach relies on the extreme multifunctionality of organic …
Nonequilibrium spin texture within a thin layer below the surface of current-carrying topological insulator : A first-principles quantum transport study
We predict that unpolarized charge current injected into a ballistic thin film of prototypical
topological insulator (TI) Bi 2 Se 3 will generate a noncollinear spin texture S (r) on its …
topological insulator (TI) Bi 2 Se 3 will generate a noncollinear spin texture S (r) on its …
Nanoscale electron transport at the surface of a topological insulator
S Bauer, CA Bobisch - Nature Communications, 2016 - nature.com
The use of three-dimensional topological insulators for disruptive technologies critically
depends on the dissipationless transport of electrons at the surface, because of the …
depends on the dissipationless transport of electrons at the surface, because of the …
Perfect inverse spin Hall effect and inverse Edelstein effect due to helical spin-momentum locking in topological surface states
We present a theory for the inverse spin Hall effect in a thin film of topological insulator (TI)
Bi 2 Se 3, connected to a reservoir with applied spin bias, in the ballistic regime. In the case …
Bi 2 Se 3, connected to a reservoir with applied spin bias, in the ballistic regime. In the case …
Ab initio transport theory for the intrinsic spin Hall effect applied to metals
We describe how the spin Hall effect (SHE) can be studied from ab initio by combining
density functional theory with the nonequilibrium Green's functions technique for quantum …
density functional theory with the nonequilibrium Green's functions technique for quantum …
Tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brillouin zone
We put forward a tight-binding model for rhombohedral topological insulator materials with
the space group D 3 d 5 (R 3¯ m). The model describes the bulk band structure of these …
the space group D 3 d 5 (R 3¯ m). The model describes the bulk band structure of these …