High-temperature flexible WSe2 photodetectors with ultrahigh photoresponsivity
The development of high-temperature photodetectors can be beneficial for numerous
applications, such as aerospace engineering, military defence and harsh-environments …
applications, such as aerospace engineering, military defence and harsh-environments …
Organic High‐Temperature Synaptic Phototransistors for Energy‐Efficient Neuromorphic Computing
Z Guo, J Zhang, B Yang, L Li, X Liu, Y Xu… - Advanced …, 2024 - Wiley Online Library
Organic optoelectronic synaptic devices that can reliably operate in high‐temperature
environments (ie, beyond 121° C) or remain stable after high‐temperature treatments have …
environments (ie, beyond 121° C) or remain stable after high‐temperature treatments have …
Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors
In this work, we investigated the temperature-dependent photodetection behavior of a high-
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors
High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors
fabricated on pulsed laser deposited β-Ga 2 O 3 thin films has been investigated. These …
fabricated on pulsed laser deposited β-Ga 2 O 3 thin films has been investigated. These …
Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating
Photodetectors based on the AlGaN/GaN heterostructure suffer from persistent
photoconductivity (PPC) in which recovery from the optical stimulus can take days. This …
photoconductivity (PPC) in which recovery from the optical stimulus can take days. This …
Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance
Layered materials, such as graphene, transition metal dichalcogenides and black
phosphorene, have been established rapidly as intriguing building blocks for optoelectronic …
phosphorene, have been established rapidly as intriguing building blocks for optoelectronic …
A high responsivity and controllable recovery ultraviolet detector based on a WO 3 gate AlGaN/GaN heterostructure with an integrated micro-heater
J Sun, S Zhang, T Zhan, Z Liu, J Wang, X Yi… - Journal of Materials …, 2020 - pubs.rsc.org
A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a
tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is …
tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is …
Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector
An AlGaN/GaN metal-heterostructure-metal (MHM) ultraviolet (UV) photodetector employing
lateral Schottky contacts was fabricated and characterized at different temperatures. As the …
lateral Schottky contacts was fabricated and characterized at different temperatures. As the …
An AlGaN/GaN dual channel triangular microcantilever based UV detector
The UV detection capabilities of III-nitride dual channel triangular microcantilevers,
consisting of AlGaN/GaN two-dimensional electron gas channels with an intervening GaN …
consisting of AlGaN/GaN two-dimensional electron gas channels with an intervening GaN …
Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
SH Baek, GW Lee, CY Cho, SN Lee - Scientific Reports, 2021 - nature.com
Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using
AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the …
AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the …