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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
E Kano, K Kataoka, J Uzuhashi, K Chokawa… - Journal of Applied …, 2022 - pubs.aip.org
We carried out atomic-scale observations of Mg-ion-implanted GaN by transmission electron
microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic …
microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic …
Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis …
Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on
standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating …
standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating …
Highly spatially resolved map** of the piezoelectric potentials in InGaN quantum well structures by off-axis electron holography
The internal fields in 2.2 nm thick InGaN quantum wells in a GaN LED structure have been
investigated by using aberration-corrected off-axis electron holography with a spatial …
investigated by using aberration-corrected off-axis electron holography with a spatial …
[HTML][HTML] On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
We investigate the interfaces and polarity domains at the atomic scale in epitaxial AlN and
GaN/AlN grown by hot-wall metal organic chemical vapor epitaxy on the carbon face of SiC …
GaN/AlN grown by hot-wall metal organic chemical vapor epitaxy on the carbon face of SiC …
Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography
The properties of ScAlN layers grown by molecular beam epitaxy have been carefully
studied using atom probe tomography (APT) and complementary techniques. The measured …
studied using atom probe tomography (APT) and complementary techniques. The measured …
[HTML][HTML] Overcoming the compensation of acceptors in GaN: Mg by defect complex formation
Z ** distribution and luminescence in a nitride laser junction by Photonic Atom Probe
E Weikum, A Diaz-Damian, J Houard, G Da Costa… - Physical Review …, 2024 - APS
The Photonic Atom Probe is applied to the study of nanoscale field-emission tip specimens
containing a section of III-N device constituted by a sequence of alloyed and doped sections …
containing a section of III-N device constituted by a sequence of alloyed and doped sections …
Investigation of AlGaN UV emitting tunnel junction LED devices by off-axis electron holography
Here we use off-axis electron holography combined with advanced transmission electron
microscopy techniques to understand the opto-electronic properties of AlGaN tunnel junction …
microscopy techniques to understand the opto-electronic properties of AlGaN tunnel junction …
Dopant-defect interactions in Mg-doped GaN via atom probe tomography
In this work, an in-depth analysis of atomic level dopant-defect interactions in N-polar GaN:
Mg was performed using atom probe tomography (APT). The 3D visualization of ion …
Mg was performed using atom probe tomography (APT). The 3D visualization of ion …
Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography
The measurement of the composition of ε-Ga2O3 and the quantification of Sn do** in ε-
Ga2O3: Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending …
Ga2O3: Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending …