[HTML][HTML] Epitaxial Growth of Ga2O3: A Review
Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG)
semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric …
semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric …
[HTML][HTML] Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
The heteroepitaxial growth and phase formation of Ga 2 O 3 on Al-polar AlN (0001)
templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches …
templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches …
200 cm2/Vs electron mobility and controlled low 1015 cm− 3 Si do** in (010) β-Ga2O3 epitaxial drift layers
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-
doped 4.5 μm thick β-Ga 2 O 3 films with electron concentrations in the 10 15 cm− 3 range …
doped 4.5 μm thick β-Ga 2 O 3 films with electron concentrations in the 10 15 cm− 3 range …
Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy
Y Wang, J Li, W Wu, W Li, Q Feng, Y Zhang… - Surfaces and …, 2024 - Elsevier
Pulsed Sn do** (PSD) homoepitaxial gallium oxide (Ga 2 O 3) films were deposited on (-
201) β-Ga 2 O 3 substrates using metal-organic chemical vapor deposition (MOCVD). The …
201) β-Ga 2 O 3 substrates using metal-organic chemical vapor deposition (MOCVD). The …
High-Efficiency Do** Outcomes in Homoepitaxial β-Ga2O3 Films via Pulsed Si Do** with MOCVD
Y Wang, Q Feng, W Wu, Y Liu, Y Zhang… - Crystal Growth & …, 2024 - ACS Publications
Using metal–organic chemical vapor deposition, pulsed Si-doped homoepitaxial gallium
oxide (β-Ga2O3) films were deposited on (010) β-Ga2O3 substrates. The impact of the Si …
oxide (β-Ga2O3) films were deposited on (010) β-Ga2O3 substrates. The impact of the Si …
High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system
C Zhang, P Lu, W Qiu, X Kuang, R Tu… - Materials Today …, 2024 - Elsevier
A comprehensive thermodynamic study of CVD β-Ga 2 O 3 epitaxial films from TMGa-H 2 O
(trimethylgallium-water) system is performed with a wide experimental condition range and …
(trimethylgallium-water) system is performed with a wide experimental condition range and …
[HTML][HTML] Study on the effects of Si-do** in molecular beam heteroepitaxial β-Ga2O3 films
J Zhan, Y Wu, X Zeng, B Feng, M He, G He… - Journal of Applied …, 2024 - pubs.aip.org
β-Ga 2 O 3, an emerging wide bandgap semiconductor material, holds significant potential
for various applications. However, challenges persist in improving the crystal quality and …
for various applications. However, challenges persist in improving the crystal quality and …
Optimization of Ga2O3 Thin Film Growth via Magnetron Sputtering: Influence of Growth Pressure on Crystallinity, Surface Morphology, and Optical Properties
Z Guo, Y Mao - Vacuum, 2025 - Elsevier
Abstract Gallium oxide (Ga₂O₃) thin films were successfully deposited on 6° off-axis
sapphire substrates using RF magnetron sputtering, and the effects of varying growth …
sapphire substrates using RF magnetron sputtering, and the effects of varying growth …
Record-High Electron Mobility and Controlled Low 10 cm Si-do** in (010) -GaO Epitaxial Drift Layers
C Peterson, A Bhattacharyya… - ar** on the Optical Properties of β-Ga2O3 Thin Films.
Z Qiongli, W Xu, MA Kui… - Journal of Synthetic …, 2024 - search.ebscohost.com
In recent years, semiconductor devices are develo** towards high heat dissipation, high
breakdown field strength and low energy consumption, so the ultra-wide band …
breakdown field strength and low energy consumption, so the ultra-wide band …