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Design and simulation of a high efficiency CdS/CdTe solar cell
A thin film solar cell based on cadmium telluride (CdTe) has been investigated by means of
an accurate numerical simulation study. To optimize the design in terms of power conversion …
an accurate numerical simulation study. To optimize the design in terms of power conversion …
[HTML][HTML] Influence of do** concentration and thickness of regions on the performance of InGaN single junction-based solar cells: A simulation approach
The impact of do** concentration and thickness of n-InGaN and p-InGaN regions on the
power conversion efficiency of single junction-based InGaN solar cells was studied by the …
power conversion efficiency of single junction-based InGaN solar cells was studied by the …
Improving the efficiency of a-Si: H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating
In this paper, we present an analytical study of the impact of light trap** and multilayer
antireflection coating (ARC) on the electrical characteristics of n (a-Si: H)/i (a-Si: H)/p (c …
antireflection coating (ARC) on the electrical characteristics of n (a-Si: H)/i (a-Si: H)/p (c …
High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell
In this paper, an efficient three-layered p-In 0.6 Ga 0.6 N/p-In 0.7 Ga 0.7 N/n-In 0.7 Ga 0.7 N
(PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were …
(PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were …
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications
The electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide–semiconductor
field-effect transistor (MOSFET) have been investigated by using a multiobjective genetic …
field-effect transistor (MOSFET) have been investigated by using a multiobjective genetic …
Modelling and performance analysis of a GaN-based n/p junction betavoltaic cell
In this work, we optimized the performance of a gallium nitride (GaN)-based n/p junction
betavoltaic cell irradiated by the radioisotope nickel-63 (N i 63). In particular, we developed …
betavoltaic cell irradiated by the radioisotope nickel-63 (N i 63). In particular, we developed …
Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs
The temperature and carrier-trap** effects on the electrical characteristics of a 4H silicon
carbide (4H-SiC) metal–oxide–semiconductor field effect transistor (MOSFET) dimensioned …
carbide (4H-SiC) metal–oxide–semiconductor field effect transistor (MOSFET) dimensioned …
Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes
The current–voltage characteristics of Al/Ti/4H-SiC Schottky barrier diodes have been
investigated in the 85–445 K temperature range by means of a combined numerical and …
investigated in the 85–445 K temperature range by means of a combined numerical and …
Analytical model for the light trap** effect on ZnO: Al/c-Si/SiGe/c-Si solar cells with an optimized design
This paper deals with the analytical investigation of light trap** effects on the performance
of silicon-germanium (SiGe)-based solar cells in order to optimize both the texture …
of silicon-germanium (SiGe)-based solar cells in order to optimize both the texture …