2D materials for spintronic devices
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …
dimension and unique physical properties. A wide variety of emerging spintronic device …
The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …
attracted considerable research interest in the context of their use in ultrascaled devices …
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
Two-dimensional layered semiconductors present a promising material platform for band-to-
band-tunneling devices given their homogeneous band edge steepness due to their …
band-tunneling devices given their homogeneous band edge steepness due to their …
Tunnel field-effect transistors: Prospects and challenges
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its
steep-slope prospects and the resulting advantages in operating at low supply voltage (V …
steep-slope prospects and the resulting advantages in operating at low supply voltage (V …
Do**-less tunnel field effect transistor: Design and investigation
Using calibrated simulations, we report a detailed study of the do**-less tunnel field effect
transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the …
transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the …
Low-voltage tunnel transistors for beyond CMOS logic
Steep subthreshold swing transistors based on interband tunneling are examined toward
extending the performance of electronics systems. In particular, this review introduces and …
extending the performance of electronics systems. In particular, this review introduces and …
A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time
Carbon nanotube field effect transistor (CNTFET) is swiftly becoming an alternative to
conventional CMOS transistors due to superior transport properties, improved current …
conventional CMOS transistors due to superior transport properties, improved current …
[HTML][HTML] 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
Two-dimensional materials present a versatile platform for develo** steep transistors due
to their uniform thickness and sharp band edges. We demonstrate 2D-2D tunneling in a …
to their uniform thickness and sharp band edges. We demonstrate 2D-2D tunneling in a …
Demonstration of L-shaped tunnel field-effect transistors
An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT)
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …
Direct and indirect band-to-band tunneling in germanium-based TFETs
Germanium is a widely used material for tunnel FETs because of its small band gap and
compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is …
compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is …