Efforts to design devices emulating complex cognitive abilities and response processes of
biological systems have long been a coveted goal. Recent advancements in flexible …

The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …

Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …

With the rise in artificial intelligence (AI), computing systems are facing new challenges
related to the large amount of data and the increasing burden of communication between …

The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …

In this paper, we discuss array-level MTJ process, performance, and reliability requirements
for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled …

We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …

Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …