Resistive switching memory devices can be categorized into either filamentary or non-
filamentary ones depending on the switching mechanisms. Both types have been …

In this letter, we report analog switching characteristics in an analog resistive random access
memory device based on a TiW/Al 2 O 3/Ta 2 O 5/Ta stack. For this device, both oxides were …

In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the
conduction mechanism and degradation characteristics of memristors with different …

We present a circuit technique to extract true random numbers from carrier capture and
emission in oxide traps in the emerging redox-based resistive memory (ReRAM). This …

Increasing demands for mass storage and new paradigm computing ask for non-volatile
memories that can meet reliability requirements. Hf 0.5 Zr 0.5 O 2-based (HZO) memory has …

In this paper, a synaptic transistor based on the indium zinc oxide (IZO)-hafnium oxide (HfO
2) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the …

Despite the tremendous efforts in the past decade devoted to the development of filamentary
resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over …

For over 50 years, Moore's law functioned as road map for advancements in the
semiconductor industry [1]. Soon, the predicted exponential increase in the number of …

Mechanisms of time-dependent dielectric breakdown (TDDB) in nonfilamentary a-Si/TiO 2
RRAM cell [a-vacancy modulated conductive oxide (VMCO)] have been examined in this …

This chapter gives a general overview of the state-of-the-art of resistive switching random
access memories (RRAM or ReRAM), which are metal/insulator/metal devices exhibiting …