[BOOK][B] Fundamentals of nanoscaled field effect transistors

A Chaudhry - 2013 - Springer
This book is an outcome of my research publications during my teaching and research
career. The book is about basic understanding of the MOSFET devices and their physics at …

Influence of quantum dot characteristics on the performance of hybrid SET-FET circuits

E Amat, F Klüpfel, J Bausells… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Quantum dots (QDs) can be used as conductive islands to build-up single-electron
transistors (SETs). The characteristics of the QDs define the functional performance of the …

3D simulation of silicon-based single-electron transistors

FJ Klüpfel, P Pichler - 2017 International Conference on …, 2017 - ieeexplore.ieee.org
Single electron transistors based on silicon nanopillars were investigated with regard to their
current voltage characteristics. The simulations make use of the commercial quantum …

Rhombic Coulomb diamonds in a single-electron transistor based on an Au nanoparticle chemically anchored at both ends

Y Azuma, Y Onuma, M Sakamoto, T Teranishi… - Nanoscale, 2016 - pubs.rsc.org
Rhombic Coulomb diamonds are clearly observed in a chemically anchored Au
nanoparticle single-electron transistor. The stability diagrams show stable Coulomb …

CAD for nanometer silicon design challenges and success

JT Kong - IEEE Transactions on Very Large Scale Integration …, 2004 - ieeexplore.ieee.org
As silicon CMOS technology is scaled into the nanometer regime, the paradigm shift of
computer-aided design (CAD) technology is indispensable to cope with two major …

Simulation and machine learning based analytical study of single electron transistor (SET)

J Chatterjee, J Khatun, Siddhi, A Kumar… - Journal of …, 2024 - Springer
In recent years, the requirement for greater scalability of transistor technology for the
continuation of Moore's law has led researchers toward the investigations of several …

Characterization of a 16-bit threshold logic single-electron technology adder

M Sulieman, V Beiu - … on Circuits and Systems (IEEE Cat. No …, 2004 - ieeexplore.ieee.org
Single electron technology (SET) is one of the future technologies distinguished by its small
and low-power devices. SET also provides simple and elegant solutions for threshold-logic …

A compact model based on Bardeen's transfer Hamiltonian formalism for silicon single electron transistors

FJ Klüpfel - IEEE Access, 2019 - ieeexplore.ieee.org
Presented is a physics-based compact model for a silicon-nanopillar single-electron
transistor (SET). Tunneling currents are calculated using a master equation approach with …

Design and analysis of SET circuits: Using MATLAB modules and SIMON

M Sulieman, V Beiu - 4th IEEE Conference on Nanotechnology …, 2004 - ieeexplore.ieee.org
This paper describes two MATLAB modules which have been developed for enhancing
SIMON, a Monte Carlo simulator for single electron technology (SET) circuits. The first …

Design of a robust analog-to-digital converter based on complementary SET/CMOS hybrid amplifier

CH Lee, SW Kim, JU Lee, SH Seo… - IEEE Transactions …, 2007 - ieeexplore.ieee.org
As a solution to the high speed, ultralow power, and extremely compact ADC circuit block, a
complementary single-electron transistor (SET)/CMOS hybrid amplifier-based analog-to …