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GaN on Si technologies for power switching devices
M Ishida, T Ueda, T Tanaka… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This paper reviews the recent activities for normally-off GaN-based gate injection transistors
(GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN …
(GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN …
Progress and prospects of group-III nitride semiconductors
We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …
X-ray diffraction of III-nitrides
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
Polarization effects in nitride semiconductors and device structures
Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …
Strain-related phenomena in GaN thin films
Abstract Photoluminescence (PL), Raman spectroscopy, and x-ray diffraction are employed
to demonstrate the co-existence of a biaxial and a hydrostatic strain that can be present in …
to demonstrate the co-existence of a biaxial and a hydrostatic strain that can be present in …
Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
Recent development of technology and understanding of the growth mechanism in
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …
Lattice parameters of gallium nitride
Lattice parameters of gallium nitride were measured using high‐resolution x‐ray diffraction.
The following samples were examined:(i) single crystals grown at pressure of about 15 …
The following samples were examined:(i) single crystals grown at pressure of about 15 …
[ספר][B] Introduction to nitride semiconductor blue lasers and light emitting diodes
S Nakamura, SF Chichibu - 2000 - taylorfrancis.com
The" blue laser" is an exciting new device used in physics. The potential is now being
recognized for its development into a commercial lighting system using about a tenth of the …
recognized for its development into a commercial lighting system using about a tenth of the …
Properties of strained wurtzite GaN and AlN: Ab initio studies
The structural, dielectric, lattice-dynamical, and electronic properties of biaxially and
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …
Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga) N/GaN quantum wells
Abstract (Al, Ga) N/GaN quantum wells have been studied by temperature-dependent
luminescence and reflectivity. The samples were grown by molecular beam epitaxy on …
luminescence and reflectivity. The samples were grown by molecular beam epitaxy on …