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The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface
The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO 2) doped-
polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to …
polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to …
A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements
In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe: PVA)/n-Si (MPS-2) type
Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After …
Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After …
Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of …
Au/n-GaAs device was fabricated with an organic PNoMPhPPy thin polymer interfacial layer
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti: DLC) interlayer
In this present study, the electrical parameters of Al/p-Si (MS) structures with (Ti-doped DLC)
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
Do** rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide …
In order to study, in detail, the relationship of effect of NiO do** in ZnO on AC electrical-
conductivity (σac), complex-permittivity (ɛ*), complex-electric modulus (M*) and interface …
conductivity (σac), complex-permittivity (ɛ*), complex-electric modulus (M*) and interface …
Variation of the surface states and series resistance depending on voltage, and their effects on the electrical features of a Schottky structure with CdZnO interface
In the present study, voltage-dependent variation of the interface traps (D it) and series
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure
A metal-polymer-semiconductor (MPS) structure based on 5 wt% graphene (Gr) doped
polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method …
polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method …
Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO: PVP)/n-Si structures by using the …
In this study, frequency-dependent physical parameters, voltage-dependent of surface
traps/states, and their lifetime of the Au/(ZnCdS-GO: PVP)/n-Si (MPS) type structures were …
traps/states, and their lifetime of the Au/(ZnCdS-GO: PVP)/n-Si (MPS) type structures were …
Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact
The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes
are a significant issue with more advantageous than the on-chip sensor. The sensitivity () …
are a significant issue with more advantageous than the on-chip sensor. The sensitivity () …
The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate …
The current-transport mechanisms (CTMs) and temperature sensitivities (S) of the Al/(In2S3-
PVA)/p-Si SBDs have been investigated using I–V measurements between 80 and 320 K …
PVA)/p-Si SBDs have been investigated using I–V measurements between 80 and 320 K …