Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide
range of compelling applications in power electronics. In this review, we have explored the …
range of compelling applications in power electronics. In this review, we have explored the …
Impact of 100 MeV high-energy proton irradiation on β-Ga2O3 solar-blind photodetector: Oxygen vacancies formation and resistance switching effect
MM Chang, DY Guo, XL Zhong, FB Zhang… - Journal of Applied …, 2022 - pubs.aip.org
β-Ga 2 O 3 based solar-blind photodetectors have strong radiation hardness and great
potential applications in Earth's space environment due to the large bandgap and high bond …
potential applications in Earth's space environment due to the large bandgap and high bond …
Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range
We studied the I–V characteristics of Al/HfO2/p-Si structure investigated in a wide
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
Electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtO/-Ga₂O₃ vertical Schottky barrier diodes
In situ–and–measurements were performed on Pt/PtOx/-Ga2O3 vertical Schottky barrier
diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of …
diodes (SBD) during 120 MeV Au9+ swift heavy ion (SHI) irradiation in a fluence range of …
A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaOx-based MOS capacitors
RSP Goud, M Akkanaboina, S Machiboyina… - Nuclear Instruments and …, 2024 - Elsevier
In this work, we present a detailed study on the effects of energetic ions and gamma
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …
How to recognize the universal aspects of Mott criticality?
In this paper we critically discuss several examples of two-dimensional electronic systems
displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type …
displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type …
Dielectric response of high-κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view
O Khaldi, H Ferhi, T Larbi, F Jomni… - Physical Chemistry …, 2023 - pubs.rsc.org
Herein, we report on the dielectric-voltage nonlinearities under a constant electric field in
metal insulator metal (MIM) capacitor-based hafnium oxide (HfO2) with respect to the …
metal insulator metal (MIM) capacitor-based hafnium oxide (HfO2) with respect to the …
Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices
Y Yan, Z **, H Zhang, D Yang - International Journal of Minerals …, 2024 - Springer
In recent years, ultra-wide bandgap β-Ga2O3 has emerged as a fascinating semiconductor
material due to its great potential in power and photoelectric devices. In semiconductor …
material due to its great potential in power and photoelectric devices. In semiconductor …
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs
In situ and measurements were performed during the 120 MeV Au ion irradiation on the Pt/Al-
Ga 2 O 3, metal–oxide–semiconductor capacitors (MOSCAPs), to comprehend the swift …
Ga 2 O 3, metal–oxide–semiconductor capacitors (MOSCAPs), to comprehend the swift …
β-氧化镓单晶及其器件热处理的研究进展
严宇超， 金竹， 张辉， 杨德仁 - 矿物冶金与材料学报 (英文版), 2024 - ijmmm.ustb.edu.cn
**年来, 超宽带隙半导体β-氧化镓凭借其有意的物理性质而被认为在功率器件和紫外光电器件
方面具有极大的应用潜力. 在半导体工业中, 热处理作为一种方便有效的单晶衬底性质调制和 …
方面具有极大的应用潜力. 在半导体工业中, 热处理作为一种方便有效的单晶衬底性质调制和 …