[PDF][PDF] Al2O3/ZrO2 nanolaminates as ultrahigh gas-diffusion barriers-a strategy for reliable encapsulation of organic electronics

J Meyer, P Görrn, F Bertram, S Hamwi, T Winkler… - Adv. Mater, 2009 - academia.edu
Gas-diffusion barriers play an important role in many applications today, such as flat-panel
displays or solar cells grown on plastic substrates. In particular, organic light-emitting diodes …

Characterization of thermal barrier coatings with a gradient in porosity

A Portinha, V Teixeira, J Carneiro, J Martins… - Surface and coatings …, 2005 - Elsevier
A major problem in thermal barrier coatings (TBC) applied to gas turbine components is the
spallation of ceramic coating under thermal cycling processes. In order to prevent spallation …

Thickness dependence of the crystallization and phase transition in ZrO2 thin films.

Y Guan, J Zhou, H Zhong, W Wang… - Journal of …, 2023 - search.ebscohost.com
Fluorite-structure binary oxides (eg, HfO< sub> 2 and ZrO< sub> 2) have attracted
increasing interest for a broad range of applications including thermal barrier coatings, high …

Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films

PA Williams, JL Roberts, AC Jones… - Chemical Vapor …, 2002 - Wiley Online Library
Thin films of ZrO2 and HfO2 have been deposited by liquid injection metal–organic (MO)
CVD using a range of new alkoxide precursors,[Zr (OtBu) 2 (mmp) 2](1),[Hf (OtBu) 2 (mmp) …

Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates

SK Kim, CS Hwang - Electrochemical and Solid-State Letters, 2007 - iopscience.iop.org
Abstract thin films were grown on substrates by atomic layer deposition. A high dielectric
constant was obtained due to the formation of a high-temperature crystalline form, tetragonal …

High temperature stability of electrically conductive Pt–Rh/ZrO2 and Pt–Rh/HfO2 nanocomposite thin film electrodes

SC Moulzolf, DJ Frankel, M Pereira da Cunha… - Microsystem …, 2014 - Springer
Nanocomposite films made up of either Pt–Rh/ZrO 2 or Pt–Rh/HfO 2 materials were co-
deposited using multiple e-beam evaporation sources onto langasite (La 3 Ga 5 SiO 14) …

Nanocomposite Al2O3–ZrO2 thin films grown by reactive dual radio-frequency magnetron sputtering

DH Trinh, M Ottosson, M Collin, I Reineck, L Hultman… - Thin Solid Films, 2008 - Elsevier
Crystalline alumina–zirconia nanocomposites have been synthesized at 450° C and 750° C
with reactive magnetron sputtering using radio-frequency power supplies. The composition …

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and do**

W Weinreich, L Wilde, J Müller, J Sundqvist… - Journal of Vacuum …, 2013 - pubs.aip.org
Thin ZrO 2 films are of high interest as high-k material in dynamic random access memory
(DRAM), embedded dynamic random access memory, and resistive random access memory …

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

KW Huang, TJ Chang, CY Wang, SH Yi… - Materials Science in …, 2020 - Elsevier
A layer-by-layer, in-situ H 2 plasma treatment in each cycle of atomic layer deposition,
referred to as “atomic layer hydrogen bombardment”(ALHB), is applied to improve electrical …

Activation energy and grain growth in nanocrystalline Y-TZP ceramics

R Chaim - Materials Science and Engineering: A, 2008 - Elsevier
Grain growth of nanocrystalline yttria-stabilized tetragonal zirconia polycrystals (Y-TZP) was
studied between 1250 and 1650° C and compared to the Y-TZP data from the literature. All …