Owing to its superior material and electrical properties such as wide bandgap and high
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …

Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …

Stoichiometric and pure Al 2 O 3 gate dielectric films were grown on n-type 4 H-Si C by a
thermal atomic layer deposition process. The electrical properties of both amorphous and …

We present the integration of epitaxial graphene with thin film dielectric materials for the
purpose of graphene transistor development. The impact on epitaxial graphene structural …

GaN and related nitride semiconductors have attracted considerable interest for use in solid-
state light and high-power/-frequency devices. Fabrication of high-quality metal/GaN …

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier
diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission …

A super-thin AlN layer is inserted between the intrinsic InGaN and p-InGaN in the InGaN
solar cell structure to improve the photovoltaic property. The dark current is markedly …

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO 2) gate
dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage …

The electrical properties of p-Si/n-GaAs heterojunctions fabricated by using surface-
activated bonding (SAB) were investigated by measuring their current–voltage (I–V) and …

The leakage current characteristics of SrTiO 3 MIM capacitors, fabricated using atomic layer
deposition, are investigated. The characteristics are highly sensitive to the polarity and …