The application of radiation-hardening by design (RHBD) to the low-noise amplifier (LNA) in
an RF communications receiver has promise for improving data fidelity in applications …

Technology scaling results in that, single event effects, such as single event double-upset
due to double-node charge sharing, and single event transient (ie an invalid pulse) …

Abstract Single Event Transients (SET's) occur in analog integrated circuits due to the strike
of a heavy-ion (or) heavy energy proton at the transistor junction. It produces electron–hole …

FinFET, with narrow silicon fin, and high k/metal gate stacked combined with SOI technology
brings benefits to radiation effects. Single event transient (SET) of SOI FinFET at 14 nm …

The single-event transients in MOSFETs due to heavy ion strikes introduce soft errors in sub-
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …

Traditionally, increasing logical masking probability has been used to improve the circuit
reliability against single-event transients (SETs). As the very first work, this paper presents a …

In view of rapid development of microelectronic industry, there is a growing need to ensure
reliability and fault tolerance of combinational devices exposed to various destabilizing …

With the down scaling of device dimensions, FinFET structure faces the problem of the
increasing process variability which results to the device performance mismatch. By …

Single event transients (SETs) in analog integrated circuits result from the interaction of a
heavy ion or high-energy proton with a sensitive pn junction. SETs induce electron-hole …

In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor
(NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is …