Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …

GaN nanowires, also called nanocolumns, have emerged over the last decade as promising
nanosized building blocks for a wide variety of optoelectronic devices. In contrast to other III …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

A silicon-based laser, preferably electrically pumped, has long been a scientific and
engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk …

Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire
substrate through controlled nanowire coalescence by selective-area epitaxy. The …

In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic
growth process p-type InN can be realized for the first time by “direct” magnesium (Mg) …

The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed.
These properties include the absence of residual strain, exclusion of most extended defects …

We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles
on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single …

GaN nanowires (NWs) were grown selectively in holes of a patterned silicon oxide mask, by
rf-plasma-assisted molecular beam epitaxy (PAMBE), without any metal catalyst. The oxide …

Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-
assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry …