Heat and fluid flow in high-power LED packaging and applications
Light-emitting diodes (LEDs) are widely used in our daily lives. Both light and heat are
generated from LED chips and then transmitted or conducted through multiple packaging …
generated from LED chips and then transmitted or conducted through multiple packaging …
Efficiency droop in light‐emitting diodes: Challenges and countermeasures
Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …
InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes
S Zhou, Z Wan, Y Lei, B Tang, G Tao, P Du, X Zhao - Optics Letters, 2022 - opg.optica.org
High-efficiency GaN-based green LEDs are of paramount importance to the development of
the monolithic integration of multicolor emitters and full-color high-resolution displays. Here …
the monolithic integration of multicolor emitters and full-color high-resolution displays. Here …
Milliwatt-power far-UVC AlGaN LEDs on sapphire substrates
M Jo, Y Itokazu, H Hirayama - Applied Physics Letters, 2022 - pubs.aip.org
AlGaN LEDs emitting< 230 nm UV light were fabricated on sapphire substrates. We
employed a quantum well (QW) with an extremely thin barrier to enhance the quantum …
employed a quantum well (QW) with an extremely thin barrier to enhance the quantum …
Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes
The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with
large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier …
large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier …
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …
and remedies proposed for droop mitigation are classified and reviewed. Droop …
III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs
are known to suffer from an extremely high built-in piezoelectric polarization, which …
are known to suffer from an extremely high built-in piezoelectric polarization, which …
III-nitride deep UV LED without electron blocking layer
AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL)
to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p …
to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p …
A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …
density perplexes the development of high-power solid-state lighting. Although the relevant …
Investigation of modulation bandwidth of InGaN green micro-LEDs by varying quantum barrier thickness
Z Yuan, Y Li, X Lu, Z Wang, P Qiu, X Cui… - … on Electron Devices, 2022 - ieeexplore.ieee.org
InGaN-based micro light-emitting diodes (micro-LEDs) with 5, 10, and 13 nm quantum
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …