Growth of Epitaxial (110) 0.7 Pb (Mg1/3Nb2/3) O3-0.3 PbTiO3 Thin Films on r-Plane Sapphire...

[Free GPT-4]
[PDF] tandfonline.comFull View

Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation

M Boota, EP Houwman, M Dekkers… - … and Technology of …, 2016 - Taylor & Francis
Abstract Epitaxial (PbMg1/3Nb2/3O3) 2/3-(PbTiO3) 1/3 (PMN-PT) films with different out-of-
plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and …
保存 引用 被引用数: 24 関連記事 全 12 バージョン

Epitaxial PMN–PT thin films grown on buffered Si substrates using ceramic and single-crystal targets

J Jiang, HJ Jung, SG Yoon - Journal of alloys and compounds, 2011 - Elsevier
Abstract Epitaxial 0.65 Pb (Mg 1/3 Nb 2/3) O 3–0.35 PbTiO 3 (PMN–PT) thin films were
deposited on LSCO/CeO 2/YSZ tri-buffered Si substrate by pulsed laser deposition (PLD) …
保存 引用 被引用数: 17 関連記事 全 4 バージョン

Epitaxial 0.65 PbMg1/3Nb2/3O3–0.35 PbTiO3 (PMN–PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates

J Jiang, SG Yoon - Journal of alloys and compounds, 2011 - Elsevier
Ferroelectric PMN–PT thin films with a thickness of 600nm were epitaxially grown on
buffered Si (001) substrates at a substrate temperature that ranged from 550 to 700° C using …
保存 引用 被引用数: 15 関連記事 全 4 バージョン
[Free GPT-4]
[PDF] academia.edu

Epitaxial ferroelectric 0.3 Pb (In1/2Nb1/2) O3–0.38 Pb (Mg1/3Nb2/3) O3–0.32 PbTiO3 thin films grown on (110)-oriented MgO substrates

W Ji, K Yao, A Al-Mamun, CS Bhatia - Thin Solid Films, 2015 - Elsevier
Abstract Ferroelectric 0.3 Pb (In 1/2 Nb 1/2) O 3–0.38 Pb (Mg 1/3 Nb 2/3) O 3–0.32 PbTiO 3
(PIN–PMN–PT) epitaxial thin films with a perovskite phase were grown on (110)-oriented …
保存 引用 被引用数: 9 関連記事 全 4 バージョン

Enhanced ferroelectric properties of 0.95 Pb (Sc0. 5Ta0. 5) O3–0.05 PbTiO3 thin films with Pb (Zr0. 52, Ti0. 48) O3 seed layer

Y Pu, J Zhu, X Zhu, Y Luo, X Li, M Wang, J Liu, X Li… - Ceramics …, 2012 - Elsevier
0.95 Pb (Sc0. 5Ta0. 5) O3–0.05% PbTiO3 (PSTT5) thin films with and without a Pb (Zr0. 52,
Ti0. 48) O3 (PZT52/48) seed layer were deposited on Pt/Ti/SiO2/Si (100) substrates by RF …
保存 引用 被引用数: 10 関連記事 全 2 バージョン

[書籍][B] Growth of heteroepitaxial single crystal lead magnesium niobate-lead titanate thin films on r-plane sapphire substrates

M Sunder - 2009 - search.proquest.com
The research reported in this dissertation investigates approaches to grow heteroepitaxial
(001) Lead Magnesium Niobate-Lead Titanate (PMN-PT) perovskite thin films on highly …
保存 引用 関連記事 全 2 バージョン 図書館検索