Quantum pum** through the surface states of a topological insulator

H Nikoofard, M Esmaeilzadeh, R Farghadan, JT Sun - Physical Review B, 2022 - APS
We investigate quantum charge pum** through the surface states of a topological
insulator (TI), ie, Bi 2 Te 3. We consider a device with two oscillating potentials for the …

Quantum charge and spin pum** in monolayer phosphorene

H Nikoofard, M Esmaeilzadeh, E Heidari-Semiromi… - Physical Review B, 2020 - APS
We study quantum-charge and spin-transport properties and the effects of in-plane strain on
the charge and spin currents in a phosphorene monolayer using an adiabatic pum** …

Gate-controlled spin–valley–layer locking in bilayer transition-metal dichalcogenides

H Khani, SP Pishekloo - Nanoscale, 2020 - pubs.rsc.org
The interplay between various internal degrees of freedom of electrons is of fundamental
importance for designing high performance electronic devices. A particular instance of this …

Spin caloritronics in armchair silicene nanoribbons with sp3 and sp2-type alternating hybridizations

XY Tan, DD Wu, QB Liu, HH Fu… - Journal of Physics …, 2018 - iopscience.iop.org
Finite-layer nanoribbon materials have long been considered as potential candidates for
nanodevices with novel quantum effects. Here we constructed a series of ferromagnetic …

Full-electrostatic management of spin-valley transmission through topological edge states of the hexagonal materials

H Khani - Materials Today Physics, 2022 - Elsevier
All-electrostatic generation and control of both spin and valley polarizations provides a
highly promising route towards much smaller and energy-efficient nanoscale devices …

Adiabatic and non-adiabatic quantum charge and spin pum** in zigzag and armchair graphene nanoribbons

F Bourbour, M Esmaeilzadeh, SM Elahi… - Journal of Applied …, 2020 - pubs.aip.org
We propose a graphene nanoribbon pum** device and study its quantum charge and
spin pum** properties for both adiabatic and non-adiabatic regimes by using the Keldysh …

Spin and valley dependent electronic transport in molybdenum disulfide considering up to the second order k-dependent terms: a more exact solution

H Khani, M Esmaeilzadeh, F Kanjouri - Physical Chemistry Chemical …, 2019 - pubs.rsc.org
Previous studies of electronic transport in molybdenum disulfide (MoS2) are restricted to the
first order approximation of the Hamiltonian. In this paper, to obtain more exact results, we …

Generation of pure spin-valley beams at controllable angles by gate voltage in monolayer molybdenum disulfide

S Gowdini, F Kanjouri - Physica Scripta, 2022 - iopscience.iop.org
Strong spin–orbit coupling and lack of inversion symmetry in monolayer transition metal
dechalcogenides has made these materials as a promising candidate for both spintronic …

Tunable charge and spin beams in RuS4 monolayer

F Kanjouri, SP Pishekloo, H Khani - Applied Surface Science, 2019 - Elsevier
The recently predicted penta-RuS 4 monolayer with high stability, large nontrivial band gap
and robustness against oxidation is promising for applications in nanoelectronics. The band …

Strain engineering of valley polarized currents in topological crystalline insulators

F Kanjouri, SP Pishekloo, H Khani - Journal of Physics …, 2019 - iopscience.iop.org
Although the existence of four valley degrees of freedom in the (0 0 1) surface of IV–VI
semiconductor topological crystalline insulators (TCIs) provides the opportunity to multiply …