III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
III–V nanowire photovoltaics: Review of design for high efficiency
RR LaPierre, ACE Chia, SJ Gibson… - physica status solidi …, 2013 - Wiley Online Library
This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …
Interface dynamics and crystal phase switching in GaAs nanowires
Controlled formation of non-equilibrium crystal structures is one of the most important
challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …
challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …
Solution–liquid–solid synthesis, properties, and applications of one-dimensional colloidal semiconductor nanorods and nanowires
The solution–liquid–solid (SLS) and related solution-based methods for the synthesis of
semiconductor nanowires and nanorods are reviewed. Since its discovery in 1995, the SLS …
semiconductor nanowires and nanorods are reviewed. Since its discovery in 1995, the SLS …
A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow
S Lehmann, J Wallentin, D Jacobsson, K Deppert… - Nano …, 2013 - ACS Publications
III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …
Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires
CY Wen, J Tersoff, K Hillerich, MC Reuter, JH Park… - Physical review …, 2011 - APS
Nanowire growth in the standard⟨ 111⟩ direction is assumed to occur at a planar catalyst-
nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar …
nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar …
Do** of semiconductor nanowires
J Wallentin, MT Borgström - Journal of Materials Research, 2011 - cambridge.org
A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity do**. In this review article, we discuss the key results in the field of semiconductor …
impurity do**. In this review article, we discuss the key results in the field of semiconductor …
Advances in the theory of III–V nanowire growth dynamics
P Krogstrup, HI Jørgensen, E Johnson… - Journal of Physics D …, 2013 - iopscience.iop.org
Nanowire (NW) crystal growth via the vapour–liquid–solid mechanism is a complex dynamic
process involving interactions between many atoms of various thermodynamic states. With …
process involving interactions between many atoms of various thermodynamic states. With …
New mode of vapor− liquid− solid nanowire growth
We report on the new mode of the vapor− liquid− solid nanowire growth with a droplet
wetting the sidewalls and surrounding the nanowire rather than resting on its top. It is shown …
wetting the sidewalls and surrounding the nanowire rather than resting on its top. It is shown …
Do** challenges and pathways to industrial scalability of III–V nanowire arrays
W Kim, L Güniat, A Fontcuberta i Morral… - Applied Physics …, 2021 - pubs.aip.org
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …