The well-known empirical phenomenon known as Moore's Law has held true for the past
half century. However, it is beginning to break down, owing to limitations arising from …

This review describes an emerging field of electronics devices; electron spin exploitation
use for a further degree of freedom incorporation to charge state, with the significant feature …

The high-speed development of the Internet of Things and artificial intelligence is
revolutionizing the world in terms of industrial production, environmental protection, medical …

Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …

Spin transfer torque magnetic random access memory (STT-MRAM) has been widely
regarded as a potential nonvolatile memory candidate in the next-generation computer …

Nonvolatile spintronic devices have potential advantages, such as fast read/write and high
endurance together with back-end-of-the-line compatibility, which offers the possibility of …

In the current big data era, the memory wall issue between the processor and the memory
becomes one of the most critical bottlenecks for conventional Von-Newman computer …

Stateful in-memory logic (IML) is a promising paradigm to realize the unity of data storage
and processing in the same die, exhibiting great feasibility to break the bottleneck of the …

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-
MTJ) becomes a promising candidate to build up spin transfer torque magnetic random …

With the growing development in spintronics and thermoelectrics, researchers across the
globe are extensively trying to fabricate and characterize novel materials. In this regard, the …