Recent research for HZO-based ferroelectric memory towards in-memory computing applications
The AI and IoT era requires software and hardware capable of efficiently processing
massive amounts data quickly and at a low cost. However, there are bottlenecks in existing …
massive amounts data quickly and at a low cost. However, there are bottlenecks in existing …
Ferroelectric materials as photoelectrocatalysts: Photoelectrode design rationale and strategies
Ferroelectrics are crystalline materials that possess a permanent and reversible
spontaneous polarization. When applied in (opto) electronic devices, the presence of …
spontaneous polarization. When applied in (opto) electronic devices, the presence of …
Depth‐Resolved X‐Ray Photoelectron Spectroscopy Evidence of Intrinsic Polar States in HfO2‐Based Ferroelectrics
The discovery of ferroelectricity in nanoscale hafnia‐based oxide films has spurred interest
in understanding their emergent properties. Investigation focuses on the size‐dependent …
in understanding their emergent properties. Investigation focuses on the size‐dependent …
Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
HfO2-based thin films hold huge promise for integrated devices as they show full
compatibility with semiconductor technologies and robust ferroelectric properties at …
compatibility with semiconductor technologies and robust ferroelectric properties at …
Scanning Plasmon-Enhanced Microscopy for Simultaneous Optoelectrical Characterization
Scanning microscopy methods are crucial for the advancement of nanoelectronics.
However, the vertical nanoprobes in such techniques suffer limitations such as the fragility at …
However, the vertical nanoprobes in such techniques suffer limitations such as the fragility at …
Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers
N Barrett, W Hamouda, C Lubin, J Laguerre… - Applied Physics …, 2024 - pubs.aip.org
In this paper, the ferroelectric properties of TiN/Ti/Si: HfO 2/TiN stacks are shown to be
modulated by the Ti oxygen scavenging layer, leading to improved remanent polarization …
modulated by the Ti oxygen scavenging layer, leading to improved remanent polarization …
[HTML][HTML] Spatially selective crystallization of ferroelectric Hf0. 5Zr0. 5O2 films induced by sub-nanosecond laser annealing
In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic
layer deposited amorphous Hf 0.5 Zr 0.5 O 2 (HZO) films in an air atmosphere. We used an …
layer deposited amorphous Hf 0.5 Zr 0.5 O 2 (HZO) films in an air atmosphere. We used an …
Sodium-controlled interfacial resistive switching in thin film niobium oxide for neuromorphic applications
A double layer 2-terminal device is employed to show Na-controlled interfacial resistive
switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible …
switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible …
Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing
Z Wang, Z Guan, H Wang, X Zhou, J Li… - … Applied Materials & …, 2024 - ACS Publications
The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the
information storage and processing performances of ferroelectric ZrO2-based nonvolatile …
information storage and processing performances of ferroelectric ZrO2-based nonvolatile …
[HTML][HTML] Na+-doped WO3 double-layer resistive switching device for biomimetic applications
We report on polycrystalline double-layer NaWO 3 thin films in a two-terminal device
configuration showing resistive switching (RS) based on the neuronal ion Na+ for …
configuration showing resistive switching (RS) based on the neuronal ion Na+ for …