We report on systematic measurements of resonant plasma waves oscillations in several
gate-length InGaAs high electron mobility transistors (HEMTs) and compare them with …

A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A
fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz …

We present a hydrodynamic model to simulate the excitation by optical beating of plasma
waves in nanometric field effect transistors. The biasing conditions are whatever possible …

A method for the heterodyne detection of terahertz (THz) signals is proposed. A high
electron mobility transistor is used as a nonlinear element, while the optical beating of two …

We report on photo-induced terahertz radiation with a high spectral purity generated by a
submicron sized InGaAs-based high-electron-mobility transistor. The emission peak is due …

We derive at first-order the carrier and velocity conservation equations and a pseudo-2D
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …

Hydrodynamic calculations of the components of small-signal admittance and impedance
matrix are performed for InGaAs HEMT. Modifications of high-frequency small-signal …

Using a hydrodynamic model self-consistently coupled to a Poisson solver, we investigate
the time and frequency response of InGaAs diodes excited at room temperature by an …

We investigate the possibility of using the n+ nn+ diodes to produce Gunn oscillations.
According to our results, we suggest our device as a possible unipolar device for heterodyne …

We investigate the influence of collective plasma modes in a field-effect transistor channel
under different excitations and biasing conditions. First, we study the case of a device …