Understanding memristive switching via in situ characterization and device modeling
Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …
unconventional computing, memristive devices have drawn substantial research attention in …
A collective study on modeling and simulation of resistive random access memory
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …
design and description of resistive random access memory (RRAM), being a nascent …
[BOOK][B] Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
With its comprehensive coverage, this reference introduces readers to the wide topic of
resistance switching, providing the knowledge, tools, and methods needed to understand …
resistance switching, providing the knowledge, tools, and methods needed to understand …
In Situ transmission electron microscopy characterization and manipulation of two‐dimensional layered materials beyond graphene
Two‐dimensional (2D) ultra‐thin materials beyond graphene with rich physical properties
and unique layered structures are promising for applications in electronics, chemistry …
and unique layered structures are promising for applications in electronics, chemistry …
To the issue of the memristor's hrs and lrs states degradation and data retention time
AV Fadeev, KV Rudenko - Russian Microelectronics, 2021 - Springer
In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …
memory elements based on reversible resistive switching in oxide dielectrics are studied …
Zinc oxide thin films for memristive devices: a review
ASBTRACT Zinc Oxide (ZnO) thin films have been addressed as promising candidates for
the fabrication of Resistive Random Access Memory devices, which are alternative to …
the fabrication of Resistive Random Access Memory devices, which are alternative to …
Transverse barrier formation by electrical triggering of a metal-to-insulator transition
Application of an electric stimulus to a material with a metal-insulator transition can trigger a
large resistance change. Resistive switching from an insulating into a metallic phase, which …
large resistance change. Resistive switching from an insulating into a metallic phase, which …
Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant
An improvement in resistive switching (RS) characteristics of CeO2-based devices has been
reported by charge transfer through Al metal as a dopant. Moreover, density functional …
reported by charge transfer through Al metal as a dopant. Moreover, density functional …
Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric
Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were
manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer …
manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer …
Analysis of the Switching Variability in -Based RRAM Devices
In this letter, we focus on the cycle-to-cycle variability of the low resistive state in Ni/HfO 2-
based resistive switching structures. The results show that several discrete current levels …
based resistive switching structures. The results show that several discrete current levels …