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Complementary FETs with wrap around contacts and method of forming same
The present disclosure relates generally to wrap around contact formation in source/drain
regions of a semiconduc tor device such as an integrated circuit (IC), and more particularly …
regions of a semiconduc tor device such as an integrated circuit (IC), and more particularly …
Complementary FETs with wrap around contacts and methods of forming same
The present disclosure relates generally to wrap around contact formation in source/drain
regions of a semiconduc tor device such as an integrated circuit (IC), and more particularly …
regions of a semiconduc tor device such as an integrated circuit (IC), and more particularly …
Vertically stacked transistors
Embodiments of the present invention are directed to a method of fabricating a vertically
stacked nanosheet semiconductor device. A non-limiting example of the method includes …
stacked nanosheet semiconductor device. A non-limiting example of the method includes …
Systems and methods utilizing parallel configurations of magnetic memory devices
KD Bozdag, M Gajek, M El Baraji, EM Ryan - US Patent 10,347,308, 2019 - Google Patents
Amagnetic storage device is provided. The magnetic storage device comprises a magnetic
memory cell, which includes two or more magnetic tunnel junctions (MTJS), including a first …
memory cell, which includes two or more magnetic tunnel junctions (MTJS), including a first …
Systems and methods utilizing serial configurations of magnetic memory devices
KD Bozdag, M Gajek, M El Baraji, EM Ryan - US Patent 10,403,343, 2019 - Google Patents
(57) ABSTRACT A memory cell apparatus is provided. The apparatus com prises two or
more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic …
more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic …
Vertical field effect transistor with reduced external resistance
(57) ABSTRACT A semiconductor structure and a method for fabricating the same. The
semiconductor structure includes a substrate and at least one semiconductor fin contacting …
semiconductor structure includes a substrate and at least one semiconductor fin contacting …
Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor
A method for manufacturing a vertical transistor device includes respectively forming a first
and second plurality of fins in first and second device regions on a substrate. A plurality of …
and second plurality of fins in first and second device regions on a substrate. A plurality of …
Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
M Gajek, M Tzoufras - US Patent 10,693,056, 2020 - Google Patents
(57) ABSTRACT A magnetic memory device is provided. The magnetic memory device
includes:(i) a cylindrical core,(ii) a metallic buffer layer that surrounds the cylindrical core,(iii) …
includes:(i) a cylindrical core,(ii) a metallic buffer layer that surrounds the cylindrical core,(iii) …
Selectively regrown top contact for vertical semiconductor devices
B Chu-Kung, G Dewey, VH Le, JT Kavalieros… - US Patent …, 2020 - Google Patents
Vertical semiconductor devices having selectively regrown top contacts and method of
fabricating vertical semiconduc tor devices having selectively regrown top contacts are …
fabricating vertical semiconduc tor devices having selectively regrown top contacts are …
Wrap-around contact for vertical field effect transistors
Embodiments of the present invention are directed to form ing a wrap-around contact (WAC)
for a vertical field effect transistor (VFET). In a non-limiting embodiment of the invention, a …
for a vertical field effect transistor (VFET). In a non-limiting embodiment of the invention, a …