The efficient integration of transition metal dichalcogenides (TMDs) into the current
electronic device technology requires mastering the techniques of effective tuning of their …

Superconducting germanium films are an intriguing material for possible applications in
fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal …

Abstract Nominally 45 nm GaN: Mg/5 nm (Ga, Mn) N/45 nm GaN: Mg trilayers structures
prepared by molecular beam epitaxy on GaN-buffered Al 2 O 3 substrates are investigated …

Controlled do** with an effective carrier concentration higher than 1020 cm− 3 is a key
challenge for the full integration of Ge into silicon-based technology. Such a highly doped …

In this review, the application of light ion irradiation is discussed for tailoring novel functional
materials and for improving the performance in SiC or Si based electrical power devices …

P‐type hyperdoped germanium (Ge) has attracted significant attention for the development
of superconducting semiconductors. However, the limited solid solubility of acceptors …

High-fluence gallium (Ga+) implantation at medium energies is proven to be an effective tool
in forming superconducting (SC) thin films in germanium (Ge). By changing the post …

This chapter presents a review of the most relevant experimental results demonstrating the
ability of nanosecond laser annealing to achieve dopant activation well above the solid …

This study comprises an investigation of the superconductivity in highly doped diamond,
comprising elements from groups III and V acting as acceptor and donor impurities …