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Recent developments in negative capacitance gate-all-around field effect transistors: a review
L Qin, C Li, Y Wei, G Hu, J Chen, Y Li, C Du, Z Xu… - IEEE …, 2023 - ieeexplore.ieee.org
With transistors scaling down to 3 nm node and beyond, short channel effect (SCE) as well
as power consumption dissipation present immense challenges for further scaling down of …
as power consumption dissipation present immense challenges for further scaling down of …
Current prospects and challenges in negative-capacitance field-effect transistors
For decades, the fundamental driving force behind energy-efficient and cost-effective
electronic components has been the downward scaling of electronic devices. However, due …
electronic components has been the downward scaling of electronic devices. However, due …
Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing
Ferroelectric (FE) field-effect transistors are interesting for their non-destructive readout
characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE …
characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE …
Performance investigation of ferroelectric L-shaped tunnel FET with suppressed corner tunneling for low power applications
In this work, a ferroelectric L-shaped tunnel FET (FE-LSTFET) is introduced to offer
improvement in various DC and analog/high-frequency parameters. In this design, the …
improvement in various DC and analog/high-frequency parameters. In this design, the …
Ferri-ionic coupling in nanoflakes: Polarization states and controllable negative capacitance
We consider nanoflakes of van der Waals ferrielectric Cu In P 2 S 6 covered by an ionic
surface charge and reveal the appearance of polar states with a relatively large polarization …
surface charge and reveal the appearance of polar states with a relatively large polarization …
FerroX: A GPU-accelerated, 3D phase-field simulation framework for modeling ferroelectric devices
We present a massively parallel, 3D phase-field simulation framework for modeling
ferroelectric materials based scalable logic devices. This code package, FerroX, self …
ferroelectric materials based scalable logic devices. This code package, FerroX, self …
Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0. 5Zr0. 5O2 ferroelectric thin films
Abstract Domain walls (DWs) play an essential role in altering the polarization and related
properties of ferroelectric materials, and are regulated by the mechanism of changing atomic …
properties of ferroelectric materials, and are regulated by the mechanism of changing atomic …
Influence of chemical strains on the electrocaloric response, polarization morphology, tetragonality, and negative-capacitance effect of ferroelectric core-shell …
Using Landau-Ginzburg-Devonshire (LGD) approach, we proposed the analytical
description of the influence of chemical strains on spontaneous polarization and the …
description of the influence of chemical strains on spontaneous polarization and the …
[HTML][HTML] Roadmap on low-power electronics
This article is written on behalf of many colleagues, collaborators, and researchers in the
field of advanced materials who continue to enable and undertake cutting-edge research in …
field of advanced materials who continue to enable and undertake cutting-edge research in …
Optimization for device figure of merit of ferroelectric tunnel FET using genetic algorithm
Tunnel FET is a gate-controlled, field effect transistor, followed band to band tunneling
(BTBT) transport of charge carriers, having low subthreshold swing (SS< 60 Mv decade− 1 …
(BTBT) transport of charge carriers, having low subthreshold swing (SS< 60 Mv decade− 1 …