The purpose of this paper is to provide a comprehensive overview of the field‐effect
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …

In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

A highly efficient and accurate extraction algorithm for the small-signal equivalent-circuit
parameters of a GaN high electron-mobility transistor device is presented. Elements of the …

Accurate modeling of electrothermal effects of GaN electronic devices is critical for reliability
design and assessment. In this paper, an electrothermal model for large signal equivalent …

A neural network (NN)-based hybrid physical model for gallium nitride high-electron-mobility
transistors (GaN HEMTs) is proposed. In this model, the artificial NN (ANN) is used to …

This letter reports on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high-
resistive silicon substrate with a record maximum oscillation cutoff frequency F MAX. Double …

In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high
electron mobility transistors is demonstrated that is constructed around a surface-potential …

Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-
mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In …

Small-signal equivalent circuit (SSEC) models prove indispensable to a broad range of
activities, ranging from the understanding of device physics, the analysis of device …

Thermal characterizations and modeling have been carried out on a 0.15 μm×(4× 50) μm
gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from-40° C to …