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A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF …
This study intends to investigate the effects of barrier scaling, a crucial RF GaN-HEMT
design element, which is imperative to achieve enhanced performance at nano-scale …
design element, which is imperative to achieve enhanced performance at nano-scale …
High-efficiency AlGaN/GaN/graded-AlGaN/GaN double-channel HEMTs for sub-6G power amplifier applications
In this article, the superior power performance of a double-channel high-electron-mobility
transistor (HEMT) operating at a high drain voltage of sub-6 GHz was demonstrated using a …
transistor (HEMT) operating at a high drain voltage of sub-6 GHz was demonstrated using a …
Transducer-less thermoreflectance technique for measuring thermal properties of the buried buffer layer and interface in GaN-based HEMTs
Measuring the thermal properties of the buried GaN buffer layer and interface in GaN high-
electron mobility transistor (HEMT) structures is of crucial importance. This remains …
electron mobility transistor (HEMT) structures is of crucial importance. This remains …
Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN: Fe Heterostucture
In this work, we report the ultra-high RF power performance of GaN HEMTs at X-and Ka-
band achieved by AlGaN/GaN/AlN: Fe heterostructure. Without field-plate design, a record …
band achieved by AlGaN/GaN/AlN: Fe heterostructure. Without field-plate design, a record …
Defect evolution induced by low-dose neutron irradiation and elastoplastic deformation mechanism of indium-doped GaN materials
T Li, F Shang - Ceramics International, 2024 - Elsevier
The low-dose neutron irradiation defect evolution and nanoindentation response of indium
(In)-doped gallium nitride (GaN) materials are investigated in this work, which is of great …
(In)-doped gallium nitride (GaN) materials are investigated in this work, which is of great …
First demonstration of state-of-the-art GaN HEMTs for power and RF applications on a unified platform with free-standing GaN substrate and Fe/C co-doped buffer
In this paper, we report excellent power and radio frequency (RF) performances of GaN
HEMTs grown on free-standing GaN substrate using a unified Fe/C co-doped GaN buffer …
HEMTs grown on free-standing GaN substrate using a unified Fe/C co-doped GaN buffer …
Scattering analysis of AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer
DS Arteev, AV Sakharov, WV Lundin, EE Zavarin… - Materials, 2022 - mdpi.com
The results of the study of the influence of Fe segregation into the unintentionally doped
GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on …
GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on …
The electrical characteristic and trap** effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer
In this work, the influence of the Fe and Fe/C co-doped buffer on the AlGaN/GaN HEMTs is
systematically investigated and compared. Due to the pronounced Fe tail in the …
systematically investigated and compared. Due to the pronounced Fe tail in the …
Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications
This work investigates thin-barrier InAlN/GaN high electron mobility transistors (HEMTs) for
high-power applications through technology computer-aided design (TCAD) simulations. To …
high-power applications through technology computer-aided design (TCAD) simulations. To …