Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration
with existing silicon technology; however, their chemical vapor deposition (CVD) growth …
with existing silicon technology; however, their chemical vapor deposition (CVD) growth …
Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C
M Mattinen, JJPM Schulpen, RA Dawley… - … Applied Materials & …, 2023 - ACS Publications
Two-dimensional MoS2 is a promising material for applications, including electronics and
electrocatalysis. However, scalable methods capable of depositing MoS2 at low …
electrocatalysis. However, scalable methods capable of depositing MoS2 at low …
Atomistic insights into ultrafast SiGe nanoprocessing
Controlling ultrafast material transformations with atomic precision is essential for future
nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase …
nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase …
3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS2 Electrode for High‐Density Neuromorphic Systems
Ion‐based electrochemical random‐access memory (ECRAM) is proposed for synaptic
applications owing to its promising characteristics that have the potential to accelerate data …
applications owing to its promising characteristics that have the potential to accelerate data …
Multiscale modeling of ultrafast melting phenomena
G Calogero, D Raciti, P Acosta-Alba… - npj Computational …, 2022 - nature.com
Abstract Ultraviolet Nanosecond Laser Annealing (LA) is a powerful tool for both
fundamental investigations of ultrafast, nonequilibrium phase-change phenomena and …
fundamental investigations of ultrafast, nonequilibrium phase-change phenomena and …
Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures
Low‐power nonvolatile memories operating down to deep cryogenic temperatures are
important for a large spectrum of applications from high‐performance computing, electronics …
important for a large spectrum of applications from high‐performance computing, electronics …
Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors
We report ultrathin (nm) channel indium tin oxide (ITO) transistors, comparing different
precursors for atomic layer deposition (ALD) of the Al2O3 top-gate dielectric, and analyze …
precursors for atomic layer deposition (ALD) of the Al2O3 top-gate dielectric, and analyze …
Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal
The electrical resistivity of conventional metals such as copper is known to increase in thin
films as a result of electron-surface scattering, thus limiting the performance of metals in …
films as a result of electron-surface scattering, thus limiting the performance of metals in …
Superior High-Temperature Electrical Characteristics of ALD Ultrathin In2O3 Transistors
T Gao, P Hong, K Hu, X Miao, Y He… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
In this work, we report an effective method to improve the high-temperature reliability of
atomic-layer-deposited (ALD) ultrathin (3 nm) indium oxide (In2O transistors. A high field …
atomic-layer-deposited (ALD) ultrathin (3 nm) indium oxide (In2O transistors. A high field …
[HTML][HTML] Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing
In view of 3D sequential integration, it is proposed to perform solid-phase epitaxial regrowth
(SPER) of amorphous silicon, based on nanosecond laser pulses at energy densities (ED) …
(SPER) of amorphous silicon, based on nanosecond laser pulses at energy densities (ED) …