Most medium-voltage and high-voltage hybrid circuit breaker solutions usually adopt several
expensive insulated gate bipolar transistors connected in parallel to achieve large current …

The hybrid line commutated converter topology has been verified to reduce the commutation
failure probability effectively, but the reverse blocking integrated gate commutated thyristor …

Integrated Gate Commutated Thyristors (IGCTs) are renowned for their low on-state voltage
and high surge current capability, but their limited ability to turn off current has historically …

The corrugated p-base (CB) structure has been acknowledged as an effective method to
improve the maximum controllable current (MCC) of asymmetric integrated gate …

This paper focuses on the causes that lead to the final destruction in standard gate-
commutated thyristor (GCT) devices. A new 3-D model approach has been used for …

Integrated gate-commutated thyristor (IGCT) is a promising device in high-power
applications thanks to its low on-state voltage, large surge capacity and considerably low …

Integrated gate-commutated thyristor (IGCT) is an emerging alternative for hybrid dc breaker
(HDCB) to achieve fault current clearance in dc systems. However, the maximum …

The ambiguity in turn-off failure mechanism and subsequent limitation in turn-off capability
has become the most critical issue preventing Integrated Gate Commutated Thyristor (IGCT) …

With the increase in voltage level and current capacity of the insulated gate bipolar transistor
(IGBT), the avalanche effect has become an important factor limiting the safe operating area …

Abstract Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising
option for pulsed power applications; however, the formation of high di/dt has been …