Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Silicon quantum electronics
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
[HTML][HTML] Modeling techniques for quantum cascade lasers
Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …
[KIRJA][B] Lessons from Nanoelectronics: A New Perspective on Transport—Part B: Quantum Transport
S Datta - 2018 - World Scientific
Lessons from Nanoelectronics : Overview Page 1 Chapter 1 Overview This chapter is
essentially the same as Chapter 1 from Part A. Related video lecture available at course …
essentially the same as Chapter 1 from Part A. Related video lecture available at course …
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic… - IEEE Journal on …, 2015 - ieeexplore.ieee.org
In this paper, the performance of tunnel field-effect transistors (TFETs) based on 2-D
transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum …
transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum …
Complementary black phosphorus tunneling field-effect transistors
Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising
candidates for low-power integration circuits beyond conventional metal-oxide …
candidates for low-power integration circuits beyond conventional metal-oxide …
Few-layer phosphorene: An ideal 2D material for tunnel transistors
Abstract 2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently
for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent …
for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent …
[HTML][HTML] The fundamental downscaling limit of field effect transistors
D Mamaluy, X Gao - Applied Physics Letters, 2015 - pubs.aip.org
We predict that within next 15 years a fundamental down-scaling limit for CMOS technology
and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room …
and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room …
Dielectric engineered tunnel field-effect transistor
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …