Electrically detected magnetic resonance and near-zero-field magnetoresistance
measurements were used to study atomic-scale traps generated during high-field gate …

The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for
studying atomic-scale, paramagnetic defects that are relevant to the reliability of …

Electrically detected magnetic resonance and near-zero field magnetoresistance are
techniques that probe defect states at dielectric interfaces critical for metal–oxide …

We report on a study that offers fundamental physical insight into an important phenomenon
in solid state device physics, tunneling in Si/SiO 2. We observe near-zero field …

Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method
available to study electrically active point defects in semiconductor devices. Most EDMR …

We report on electrically detected magnetic resonance (EDMR) and near-zero-field
magnetoresistance (NZFMR) measurements observed through spin-dependent trap …

We demonstrate the ability of a relatively new analytical technique, near-zero-field
magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field …

We report low-frequency electrically detected magnetic resonance (EDMR) and near-zero
field magnetoresistance (NZFMR) measurements observed through spin-dependent trap …

We investigate the initial stages of time-dependent dielectric breakdown (TDDB) in high-field
stressed Si/SiO 2 MOSFETs via electrically detected magnetic resonance (EDMR). As …

Time-dependent dielectric breakdown (TDDB) has been an important MOSFET reliability
issue for decades, yet it is not well understood at the atomic scale. It is clear that atomic …