Compact models of wide-bandgap power devices are necessary to analyze and evaluate
their impact on circuit and system performance. Part I reviewed compact models for silicon …

To solve the simulation convergence problem of enhancement mode gallium nitride high-
electron mobility transistor (GaN HEMT) models, this paper proposes a nonsegmented …

Technology computer-aided Design (TCAD) is essential for devices technology
development, including wide bandgap power semiconductors. However, most TCAD tools …

Single event burnout (SEB) of enhancement mode GaN high-electron mobility transistors
(HEMTs) under heavy ion irradiation is systematically studied based on simulations in this …

A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …

This brief first time presents single-event burnout (SEB) simulation results for conventional
AlGaN/GaN gate field plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET …

In this paper, input capacitance (C ISS) of p-GaN gate AlGaN/GaN power high-electron-
mobility transistors (HEMTs) is systemically investigated. C ISS includes gate-to-source …

In this article, we investigate a new hardened GaN MISFET with an integrated Schottky
contact (SC-MISFET). The new device architecture significantly improves the single-event …

The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based
high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification …

This paper begins with a comprehensive review into the existing GaN device models.
Secondly, it identifies the need for a more accurate GaN switching model. A simple practical …