Atomic force microscopy for nanoscale mechanical property characterization
Over the past several decades, atomic force microscopy (AFM) has advanced from a
technique used primarily for surface topography imaging to one capable of characterizing a …
technique used primarily for surface topography imaging to one capable of characterizing a …
Plasma processing of low-k dielectrics
This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …
the field of plasma processing of low dielectric constant (low-k) materials developed for …
Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminum …
Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …
[책][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
Porosity scaling strategies for low-k films
DJ Michalak, JM Blackwell, JM Torres… - Journal of Materials …, 2015 - cambridge.org
Reducing the delay of backend interconnects is critical in delivering improved performance
in next generation computer chips. One option is to implement interlayer dielectric (ILD) …
in next generation computer chips. One option is to implement interlayer dielectric (ILD) …
Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices
High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …
[HTML][HTML] Surface sulfurization of amorphous carbon films in the chemistry of oxygen plasma added with SO2 or OCS for high-aspect-ratio etching
K Ishikawa, Y Aoki, H Sato, J Kawakami, S Tsuno… - Applied Surface …, 2024 - Elsevier
Etching of oxygen-based plasmas with sulfur dioxide (SO 2) or carbonyl sulfide (OCS) can
form high-aspect-ratio (HAR) features of amorphous carbon films as carbon hard masks …
form high-aspect-ratio (HAR) features of amorphous carbon films as carbon hard masks …
Buckling and postbuckling of etching-induced wiggling in a bilayer structure with intrinsic compressive stress
In this study, we investigate buckling and postbuckling of etching-induced wiggling in a
bilayer structure consisting of mask and masked layers. To show effects of explicit modeling …
bilayer structure consisting of mask and masked layers. To show effects of explicit modeling …
Mechanical properties of low-and high-k dielectric thin films: A surface Brillouin light scattering study
Surface Brillouin light scattering measurements are used to determine the elastic constants
of nano-porous low-k SiOC: H (165 nm) and high-k HfO 2 (25 nm) as well as BN: H (100 nm) …
of nano-porous low-k SiOC: H (165 nm) and high-k HfO 2 (25 nm) as well as BN: H (100 nm) …
Negative-tone imaging with EUV exposure toward 13 nm hp
H Tsubaki, W Nihashi, T Tsuchihashi… - Journal of …, 2016 - jstage.jst.go.jp
Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-
width roughness (LWR) and resolution due in part to polymer swelling and favorable …
width roughness (LWR) and resolution due in part to polymer swelling and favorable …