Reconfigurable field effect transistors: A technology enablers perspective
With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …
of steam, new possibilities to increase the functionality of an integrated circuit at a given …
Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors
Research in the field of electronics of 1D group-IV semiconductor structures has attracted
increasing attention over the past 15 years. The exceptional combination of the unique 1D …
increasing attention over the past 15 years. The exceptional combination of the unique 1D …
Germanium nanowire reconfigurable transistor model for predictive technology evaluation
Reconfigurable Field Effect Transistors can be electrostatically programmed to p-or n-type
behavior. This device level reconfigurability is a promising way to enhance the functionality …
behavior. This device level reconfigurability is a promising way to enhance the functionality …
Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors
Three‐gated reconfigurable field‐effect transistors are innovative nanoelectronic devices
that are rapidly and increasingly attracting substantial interest in several fields of application …
that are rapidly and increasingly attracting substantial interest in several fields of application …
Emerging reconfigurable nanotechnologies: Can they support future electronics?
Several emerging reconfigurable technologies have been explored in recent years offering
device level runtime reconfigurability. These technologies offer the freedom to choose …
device level runtime reconfigurability. These technologies offer the freedom to choose …
Investigation of thermal stress effects on subthreshold conduction in nanoscale p-FinFET from Multiphysics perspective
The rising temperature due to a self-heating or thermal environment not only degrades the
subthreshold performance but also intensifies thermal stress, posing a severe challenge to …
subthreshold performance but also intensifies thermal stress, posing a severe challenge to …
Formation and crystallographic orientation of NiSi2–Si interfaces
The transport properties of novel device architectures depend strongly on the morphology
and the quality of the interface between contact and channel materials. In silicon nanowires …
and the quality of the interface between contact and channel materials. In silicon nanowires …
Architectural evaluation of programmable transistor-based capacitorless DRAM for high-speed system-on-chip applications
High-speed write/read operation and low energy consumption along with a lower footprint
are prerequisites for one transistor (1 T) embedded DRAM (eDRAM). This work evaluates …
are prerequisites for one transistor (1 T) embedded DRAM (eDRAM). This work evaluates …
Electron transport through NiSi2–Si contacts and their role in reconfigurable field-effect transistors
A model is presented which describes reconfigurable field-effect transistors (RFETs) with
metal contacts, whose switching is controlled by manipulating the Schottky barriers at the …
metal contacts, whose switching is controlled by manipulating the Schottky barriers at the …
Operation regimes and electrical transport of steep slope Schottky Si-FinFETs
In the quest for energy efficient circuits, considerable focus has been given to steep slope
and polarity-controllable devices, targeting low supply voltages and reduction of transistor …
and polarity-controllable devices, targeting low supply voltages and reduction of transistor …