We provide comprehensive experimental data and technology computer-aided design
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …

In this letter, total ionizing dose (TID) response of bulk n-type Fin Field-Effect Transistor (n-
FinFET) is investigated with the various number of fins. Experiments show that only the …

The Aerospace Corporation performed total ionizing dose (TID) and proton testing on the
AMD Ryzen 3200G processor. The Ryzen processor is a system on chip that contains a 4 …

Using comprehensive experimental data and 3D Technology Computer-Aided Design
simulations, this paper discusses the effects and mechanisms of Total Ionizing Dose (TID) in …

This paper presents a comparative analysis of total ionizing dose (TID) response in
GlobalFoundries' 12LP and 12LP+ 12nm bulk FinFET technologies using 10keV X-rays. Our …

Total ionizing dose (TID) response of 16-nm core and input–output (I/O) n-type fin field-effect
transistors (n-FinFETs) with various gate lengths and fin numbers are investigated in this …

This abstract presents a comprehensive analysis of total ionizing dose (TID) response in
GlobalFoundries'(GFs) 12LP 12 nm bulk Fin-based field effect transistor (FinFET) technology …

Electronic components operating in aerospace environments face a variety of reliability
issues. The total ionization dose (TID) degradation mechanism of bulk I/O-FinFETs and the …

TID Effects on Random Telegraph Signals in GF 12LP FinFET Devices Page 1 Abstract— 12LP
FINFETs from GlobalFoundries are tested under 60Co γ-rays. Low frequency noise …

Layout Dependent Effects (LDE) plays a vital role in layout of analog and digital circuits.
These effects are directly affects the performance of the integrated circuits. If you did not pay …