GaN-on-Si transistors attract increasing interest for power applications. However, the
breakdown behavior of such devices remains below theoretical expectations, for which the …

The breakdown mechanism of high-voltage GaN-HEMT was analysed using the
experimental I–V characteristics and two-dimensional device simulation results. The holes …

This paper presents an extensive investigation of the impact of the resistivity of the silicon
substrate on the vertical leakage and charge trap** in 200 V GaN-on-Si enhancement …

Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is
vital for the demonstration of high performance devices. Here, we show that the growth …

We present an investigation of vertical leakage in GaN-on-Si epitaxial stack through
electrical characterization and device simulations. Different structures of increasing …

The aim of this work is to investigate the breakdown mechanisms of the layers constituting
the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the …

This paper presents an extensive analysis of the impact of substrate and buffer properties on
the performance and breakdown voltage of E-mode power HEMTs. We investigated the …

In this paper, the effects of repetitively transient overcurrent on the long-term reliability of
commercial p-GaN high-electron-mobility-transistors (HEMTs) are investigated by using …

We present a model for the vertical conduction through an AlN/p-Si junction, which is used
as a base for the growth of GaN power devices. First, we recall that for resistive silicon …

We investigate the vertical leakage mechanism in metal-organic chemical vapor deposition-
grown carbon (C)-doped AlGaN/GaN High Electron Mobility Transistors (HEMTs) on 6-in …